JPS573799A - Vapor phase growing method of compound semiconductor - Google Patents

Vapor phase growing method of compound semiconductor

Info

Publication number
JPS573799A
JPS573799A JP7738980A JP7738980A JPS573799A JP S573799 A JPS573799 A JP S573799A JP 7738980 A JP7738980 A JP 7738980A JP 7738980 A JP7738980 A JP 7738980A JP S573799 A JPS573799 A JP S573799A
Authority
JP
Japan
Prior art keywords
gas
reaction
gaas
tube
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7738980A
Other languages
English (en)
Inventor
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7738980A priority Critical patent/JPS573799A/ja
Publication of JPS573799A publication Critical patent/JPS573799A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP7738980A 1980-06-09 1980-06-09 Vapor phase growing method of compound semiconductor Pending JPS573799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7738980A JPS573799A (en) 1980-06-09 1980-06-09 Vapor phase growing method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7738980A JPS573799A (en) 1980-06-09 1980-06-09 Vapor phase growing method of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS573799A true JPS573799A (en) 1982-01-09

Family

ID=13632528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7738980A Pending JPS573799A (en) 1980-06-09 1980-06-09 Vapor phase growing method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS573799A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06114119A (ja) * 1992-10-02 1994-04-26 Mitsugi Iwasa 非常梯子装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06114119A (ja) * 1992-10-02 1994-04-26 Mitsugi Iwasa 非常梯子装置

Similar Documents

Publication Publication Date Title
US3956032A (en) Process for fabricating SiC semiconductor devices
JPH04193799A (ja) 炭化珪素単結晶の製造方法
JPS573799A (en) Vapor phase growing method of compound semiconductor
JPS56160400A (en) Growing method for gallium nitride
GB1477941A (en) Epitaxial methods of growing layers of gallium phosphide
JPH04160100A (ja) ３―５族化合物半導体のエピタキシャル成長方法
JPS5491175A (en) Vapour-phase growth method of compound semiconductor crystal
JP2528912B2 (ja) 半導体成長装置
US3900363A (en) Method of making crystal
JPS5618000A (en) Vapor phase growing method for 3-5 group compound semiconductor
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5649520A (en) Vapor growth of compound semiconductor
JPS57149721A (en) Method of vapor epitaxial growth
JPS5624985A (en) Manufacture of gallium phosphide green light emitting element
JPS56124228A (en) Method for low-tension epitaxial growth
JPS5727999A (en) Vapor phase growing method for gan
JPS5756400A (en) Continuous vapor-phase epitaxial growing furnace
JPS6437832A (en) Method of growing compound semiconductor crystal
JPS5624927A (en) Method of vapor phase growth of 3-5 group compound semiconductor in periodic table
JPS5474672A (en) Gaas vapor phase growth method
JPH0697656B2 (ja) 気相エピタキシヤル成長方法
JPS5257096A (en) Method for fabricayion of gallium arsenide having steep distribution o f impurity concentration
JPS56115531A (en) Method for schottky junction and formation of semiconductor and metal
JPS62182195A (ja) ３−ｖ族化合物半導体の成長方法
JPS61205696A (ja) ３−５族化合物半導体の気相成長装置