JPS5736861A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5736861A
JPS5736861A JP11240580A JP11240580A JPS5736861A JP S5736861 A JPS5736861 A JP S5736861A JP 11240580 A JP11240580 A JP 11240580A JP 11240580 A JP11240580 A JP 11240580A JP S5736861 A JPS5736861 A JP S5736861A
Authority
JP
Japan
Prior art keywords
forming
flat surface
projection
simplify
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11240580A
Other languages
Japanese (ja)
Inventor
Yukihiro Sasaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP11240580A priority Critical patent/JPS5736861A/en
Publication of JPS5736861A publication Critical patent/JPS5736861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the manufacturing steps of a semiconductor device and to facilitate microminiaturizing work by forming a grown layer of flat surface on a semiconductor substrate having a striped projection and forming a gate electrode on a projected thin layer region. CONSTITUTION:A conductively epitaxial layer 10 is so formed on a semi-insulating GaAs substrate 9 having a striped projection 14 as to form a flat surface, a thin layer region 17 on the projection 14 is formed as a gate region, a Schottky barrier gate electrode 13 is formed on the surface, and source, drain electrodes 11, 12 are formed on the grown layers at both sides, thereby forming an FET. Since it does not use diffusion, ion implantation method in this manner, it can simplify the manufacturing steps, can eliminate the drawbacks due to the diffusion and ion implantation method, and since the flat surface is formed, it can readily microminiaturize the device.
JP11240580A 1980-08-15 1980-08-15 Semiconductor device and manufacture thereof Pending JPS5736861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11240580A JPS5736861A (en) 1980-08-15 1980-08-15 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11240580A JPS5736861A (en) 1980-08-15 1980-08-15 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5736861A true JPS5736861A (en) 1982-02-27

Family

ID=14585824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11240580A Pending JPS5736861A (en) 1980-08-15 1980-08-15 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5736861A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63192031U (en) * 1987-05-26 1988-12-12

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109683A (en) * 1974-02-04 1975-08-28
JPS50140278A (en) * 1974-04-26 1975-11-10

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109683A (en) * 1974-02-04 1975-08-28
JPS50140278A (en) * 1974-04-26 1975-11-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63192031U (en) * 1987-05-26 1988-12-12

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