JPS57208174A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57208174A
JPS57208174A JP9230481A JP9230481A JPS57208174A JP S57208174 A JPS57208174 A JP S57208174A JP 9230481 A JP9230481 A JP 9230481A JP 9230481 A JP9230481 A JP 9230481A JP S57208174 A JPS57208174 A JP S57208174A
Authority
JP
Japan
Prior art keywords
layer
impurity
region
layers
gaas layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9230481A
Other languages
Japanese (ja)
Inventor
Tadashi Fukuzawa
Michiharu Nakamura
Eizaburo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9230481A priority Critical patent/JPS57208174A/en
Priority to EP82303137A priority patent/EP0067721B1/en
Priority to DE8282303137T priority patent/DE3279663D1/en
Priority to CA000405274A priority patent/CA1179071A/en
Publication of JPS57208174A publication Critical patent/JPS57208174A/en
Priority to US07/298,764 priority patent/US5001536A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enhance the hole mobility of a semiconductor device by utilizing as a carrier of a signal two-dimensional hole gas produced in a hetero junction boundary between a GaAs layer doped in high density with P type and a Ge layer having extremely low impurity density. CONSTITUTION:A single crystal layer 12 of an undoped Ge is formed on a semi- insulating Ge substrate 11. Then, with Be as an impurity a P type GaAs layer 14 is formed. An impurity region is formed by a Be ion implantation method in the lower region of an ohmic electrode, and ohmic electrodes 17, 19 are formed on the region. An insulating layer 18 is formed between the electrodes and a gate electrode 16. An undoped GaAs layer 13 is formed between the layers 12 and 14. The Be of impurity is not diffused in the Ge in the hetero junction boundary between the layers 12 and 14 due to the existence of the layer 13, and an abrupt stepwise difference is produced in a valence band.
JP9230481A 1981-06-17 1981-06-17 Semiconductor device Pending JPS57208174A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9230481A JPS57208174A (en) 1981-06-17 1981-06-17 Semiconductor device
EP82303137A EP0067721B1 (en) 1981-06-17 1982-06-16 Heterojunction semiconductor device
DE8282303137T DE3279663D1 (en) 1981-06-17 1982-06-16 Heterojunction semiconductor device
CA000405274A CA1179071A (en) 1981-06-17 1982-06-16 Semiconductor device
US07/298,764 US5001536A (en) 1981-06-17 1989-01-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9230481A JPS57208174A (en) 1981-06-17 1981-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57208174A true JPS57208174A (en) 1982-12-21

Family

ID=14050665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9230481A Pending JPS57208174A (en) 1981-06-17 1981-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57208174A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030177A (en) * 1983-07-28 1985-02-15 Nec Corp Semiconductor device
JPS6110266A (en) * 1984-06-15 1986-01-17 エイ・ティ・アンド・ティ・コーポレーション Supplementary logic structure
JPS62274783A (en) * 1986-05-23 1987-11-28 Nec Corp Semiconductor device
US5302840A (en) * 1991-06-20 1994-04-12 Fujitsu Limited HEMT type semiconductor device having two semiconductor well layers
US5981986A (en) * 1992-05-11 1999-11-09 Fujitsu Limited Semiconductor device having a heterojunction

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030177A (en) * 1983-07-28 1985-02-15 Nec Corp Semiconductor device
JPH0433132B2 (en) * 1983-07-28 1992-06-02 Nippon Electric Co
JPS6110266A (en) * 1984-06-15 1986-01-17 エイ・ティ・アンド・ティ・コーポレーション Supplementary logic structure
JPS62274783A (en) * 1986-05-23 1987-11-28 Nec Corp Semiconductor device
US5302840A (en) * 1991-06-20 1994-04-12 Fujitsu Limited HEMT type semiconductor device having two semiconductor well layers
EP1111681A1 (en) * 1991-06-20 2001-06-27 Fujitsu Limited HEMT type semiconductor device
US5981986A (en) * 1992-05-11 1999-11-09 Fujitsu Limited Semiconductor device having a heterojunction

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