JPS57177566A - Schottky barrier gate type field effect transistor - Google Patents
Schottky barrier gate type field effect transistorInfo
- Publication number
- JPS57177566A JPS57177566A JP6199681A JP6199681A JPS57177566A JP S57177566 A JPS57177566 A JP S57177566A JP 6199681 A JP6199681 A JP 6199681A JP 6199681 A JP6199681 A JP 6199681A JP S57177566 A JPS57177566 A JP S57177566A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- substrate
- type
- silicide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain an FET most appropriate for a low power and high density IC, by constituting a gate region of a Pt silicide layer having an oxide film with the thickness of approx. 0.5mum or less and an active layer positioned thereunder on side surfaces to isolate it from souce and drain regions by an oxide film on the silicide layer side surfaces. CONSTITUTION:Thick field oxide films 32 pressing P<+> type channel stoppers 33 are formed on the periphery of a P type Si substrate 31 with the generation of thin oxide films 34 on the surface of the substrate 31 surrounded thereby. Next, the mask 35 of a resist film is provided on the center thereof for the formation of N<+> type regions 36 within the substrate 31 on the both sides by ion implantation to remove the mask 35 for the implantation of N type impurity ion into an acdtive layer 37 thereunder. Thereafter, the film 34 is removed to laminate a polycrystalline Si layer 38 and Si3N4 film 39 for adhesion over the entire surface. Then, a gate electrode constituted of the layer 38 and film 39 is left on a part 27 of the ion implanted layer 37 by etching to form a Pt silicide layer 304 via an SiO2 film 302 with the thickness of approx. 0.5mum on the side surface thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6199681A JPS57177566A (en) | 1981-04-24 | 1981-04-24 | Schottky barrier gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6199681A JPS57177566A (en) | 1981-04-24 | 1981-04-24 | Schottky barrier gate type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57177566A true JPS57177566A (en) | 1982-11-01 |
Family
ID=13187319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6199681A Pending JPS57177566A (en) | 1981-04-24 | 1981-04-24 | Schottky barrier gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57177566A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287533A (en) * | 1988-09-24 | 1990-03-28 | Toshiba Corp | Semiconductor device |
| US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012984A (en) * | 1973-06-01 | 1975-02-10 | ||
| JPS5267982A (en) * | 1975-12-03 | 1977-06-06 | Sanyo Electric Co Ltd | Manufacture of schottky barrier type field effect transistor |
| JPS5661998A (en) * | 1979-10-11 | 1981-05-27 | American Home Prod | Microorganism test method and apparatus |
-
1981
- 1981-04-24 JP JP6199681A patent/JPS57177566A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012984A (en) * | 1973-06-01 | 1975-02-10 | ||
| JPS5267982A (en) * | 1975-12-03 | 1977-06-06 | Sanyo Electric Co Ltd | Manufacture of schottky barrier type field effect transistor |
| JPS5661998A (en) * | 1979-10-11 | 1981-05-27 | American Home Prod | Microorganism test method and apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287533A (en) * | 1988-09-24 | 1990-03-28 | Toshiba Corp | Semiconductor device |
| US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
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