JPS5731142A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5731142A
JPS5731142A JP10590980A JP10590980A JPS5731142A JP S5731142 A JPS5731142 A JP S5731142A JP 10590980 A JP10590980 A JP 10590980A JP 10590980 A JP10590980 A JP 10590980A JP S5731142 A JPS5731142 A JP S5731142A
Authority
JP
Japan
Prior art keywords
film
mask
manufacture
metallic
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10590980A
Other languages
Japanese (ja)
Inventor
Yasuhisa Sato
Chiaki Terada
Toru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10590980A priority Critical patent/JPS5731142A/en
Publication of JPS5731142A publication Critical patent/JPS5731142A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To manufacture a metallic oxide film by selectively irradiating a metallic film on an insulating film by electron beams in an atmosphere of a very small amount of O2, and to etch the metallic film without a resist mask while using the oxide film as a mask. CONSTITUTION:When SiO22 and Al3 with approximately 1mum thickness are stacked on an Si substrate 1 and the surface of the substrate is scanned by the electron beams in the atmosphere of a very small amount of O2, Al2O310 is formed. When Al is treated with phosphoric acid using the film 10 as the mask, Al wiring 3 is obtained, a resist requiring high resolution is also unnecessitated and a minute pattern is obtained.
JP10590980A 1980-07-31 1980-07-31 Manufacture of semiconductor device Pending JPS5731142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10590980A JPS5731142A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10590980A JPS5731142A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5731142A true JPS5731142A (en) 1982-02-19

Family

ID=14419986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10590980A Pending JPS5731142A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731142A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

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