JPS5736845A - Manufacture of selectively oxidized mask - Google Patents

Manufacture of selectively oxidized mask

Info

Publication number
JPS5736845A
JPS5736845A JP11241980A JP11241980A JPS5736845A JP S5736845 A JPS5736845 A JP S5736845A JP 11241980 A JP11241980 A JP 11241980A JP 11241980 A JP11241980 A JP 11241980A JP S5736845 A JPS5736845 A JP S5736845A
Authority
JP
Japan
Prior art keywords
film
mask
resist
selectively oxidized
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11241980A
Other languages
Japanese (ja)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11241980A priority Critical patent/JPS5736845A/en
Publication of JPS5736845A publication Critical patent/JPS5736845A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an ion injected mask as selectively oxidized mask by patterning a double layer made of an Si3N4 film and a polycrystalline Si film with a resist film as a mask, plasma treating it and further baking the resist film. CONSTITUTION:The pattern of a double layer made of an Si3N4 film 13 and a polycrystalline Si film 14 is formed on an SiO2 film 12 formed on an Si substrate 11. The pattern is formed by so etching it with a resist film 15 as a mask in a slightly sidewise etching manner. After it is treated in an oxygen plasma atmosphere, it is baked to depend the resist 15. Subsequently, with the resist 15 as a mask impurity ions 17 are injected, the resist is then removed, and is selectively oxidized, thereby forming a stopper 8. Since the stopper 8 is contained directly under a field oxidized film 19 in this manner and is not superposed with the other element region 20, it can prevent the decrease in the withstand voltage.
JP11241980A 1980-08-15 1980-08-15 Manufacture of selectively oxidized mask Pending JPS5736845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11241980A JPS5736845A (en) 1980-08-15 1980-08-15 Manufacture of selectively oxidized mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11241980A JPS5736845A (en) 1980-08-15 1980-08-15 Manufacture of selectively oxidized mask

Publications (1)

Publication Number Publication Date
JPS5736845A true JPS5736845A (en) 1982-02-27

Family

ID=14586171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11241980A Pending JPS5736845A (en) 1980-08-15 1980-08-15 Manufacture of selectively oxidized mask

Country Status (1)

Country Link
JP (1) JPS5736845A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5634067A (en) * 1993-11-18 1997-05-27 G.D.S. Co., Ltd. Systolic array processor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342560A (en) * 1976-09-29 1978-04-18 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342560A (en) * 1976-09-29 1978-04-18 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5634067A (en) * 1993-11-18 1997-05-27 G.D.S. Co., Ltd. Systolic array processor

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