JPS5710246A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5710246A
JPS5710246A JP2731080A JP2731080A JPS5710246A JP S5710246 A JPS5710246 A JP S5710246A JP 2731080 A JP2731080 A JP 2731080A JP 2731080 A JP2731080 A JP 2731080A JP S5710246 A JPS5710246 A JP S5710246A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
poly
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2731080A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2731080A priority Critical patent/JPS5710246A/en
Priority to EP19810101328 priority patent/EP0035690B1/en
Priority to DE8181101328T priority patent/DE3176909D1/en
Priority to US06/240,300 priority patent/US4441941A/en
Publication of JPS5710246A publication Critical patent/JPS5710246A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To improve the characteristics, by forming an oxidizing material layer such as poly Si and the like on a substrate, providing a channel stopping layer on the substrate by using an oxidation resistant mask, selectively oxydizing said material layer, and reducing the strain in the substrate in an element separating process. CONSTITUTION:In the process of forming an element separating region, a thermal oxide film 2 is formed on the Si substrate 1. Thereafter a poly Si layer 3 is provided on the entire surface. A nitride film pattern 4 is provided on the element forming region. An impurity layer 5 having the same conducting type as that of the substrate 1 is ion-implanted with the nitride film 4 as a mask. Then thermal oxidation is performed, and exposed poly Si 3 is transformed into a thick oxide film 6. Thereafter, the nitride film 4, the underlying poly Si 3, and the oxide film 2 are etched out. Then the element forming process is performed. Since the thick oxide film 6 can be formed in a relatively short time and a separate oxide film is not provided in the substrate 1, large strain is not yielded in the substrate 1 and the deterioration in characteristics can be avoided. Since lateral expansion of the oxide film 6 can be made small, this method is suitable for high integration.
JP2731080A 1980-03-06 1980-03-06 Manufacture of semiconductor device Pending JPS5710246A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2731080A JPS5710246A (en) 1980-03-06 1980-03-06 Manufacture of semiconductor device
EP19810101328 EP0035690B1 (en) 1980-03-06 1981-02-24 Semiconductor device using component insulation and method of manufacturing the same
DE8181101328T DE3176909D1 (en) 1980-03-06 1981-02-24 Semiconductor device using component insulation and method of manufacturing the same
US06/240,300 US4441941A (en) 1980-03-06 1981-03-04 Method for manufacturing a semiconductor device employing element isolation using insulating materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2731080A JPS5710246A (en) 1980-03-06 1980-03-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710246A true JPS5710246A (en) 1982-01-19

Family

ID=12217507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2731080A Pending JPS5710246A (en) 1980-03-06 1980-03-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710246A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04234146A (en) * 1990-11-17 1992-08-21 Samsung Electron Co Ltd Formation method of field oxide film for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04234146A (en) * 1990-11-17 1992-08-21 Samsung Electron Co Ltd Formation method of field oxide film for semiconductor device

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