JPS5730377A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5730377A JPS5730377A JP10543380A JP10543380A JPS5730377A JP S5730377 A JPS5730377 A JP S5730377A JP 10543380 A JP10543380 A JP 10543380A JP 10543380 A JP10543380 A JP 10543380A JP S5730377 A JPS5730377 A JP S5730377A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- layer
- active layer
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form a microminiature gate electrode and to reduce the leakage current of a semiconductor device by forming an electrode on an active layer, forming a mask covering the channel region of the active layer and mesa etching the active layer with the mask and the electrode as a mask. CONSTITUTION:High resistance GaAs buffer layer 12, N type GaAs active layer 13 and source and drain electrodes 14, 15 of the predetermined shape with metallic films are formed on a GaAs substrate 11 in the step (A). Then, a mask 18 of photoresist film is so formed as to cover the channel region of the layer 13, with the mask 18 and electrodes 14, 15 as masks the layer 13 is mesa etched, the end 13A covered with the mask 18 is formed in mesa shape, and the periphery covered with the electrodes 14, 15 is formed in recess shape in the step (B). After the mask 18 is removed, a Schottky barrier gate electrode 16 is formed with aluminum film to form a reinforcing electrode layer 19 by a gold plating in the step (D).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10543380A JPS5730377A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10543380A JPS5730377A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5730377A true JPS5730377A (en) | 1982-02-18 |
Family
ID=14407452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10543380A Pending JPS5730377A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730377A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6377165A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPH02113147A (en) * | 1988-10-21 | 1990-04-25 | Tsubakimoto Chain Co | Chain connecting links of same configuration |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079280A (en) * | 1973-11-09 | 1975-06-27 |
-
1980
- 1980-07-31 JP JP10543380A patent/JPS5730377A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5079280A (en) * | 1973-11-09 | 1975-06-27 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6377165A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPH02113147A (en) * | 1988-10-21 | 1990-04-25 | Tsubakimoto Chain Co | Chain connecting links of same configuration |
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