JPS55117280A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55117280A
JPS55117280A JP2440679A JP2440679A JPS55117280A JP S55117280 A JPS55117280 A JP S55117280A JP 2440679 A JP2440679 A JP 2440679A JP 2440679 A JP2440679 A JP 2440679A JP S55117280 A JPS55117280 A JP S55117280A
Authority
JP
Japan
Prior art keywords
film
gate
drain
mask
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2440679A
Other languages
Japanese (ja)
Inventor
Tadamichi Masamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2440679A priority Critical patent/JPS55117280A/en
Publication of JPS55117280A publication Critical patent/JPS55117280A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the frequency response of a semiconductor device by controlling and forming in high accuracy a distance along the channel between a gate electrode and a drain layer at 0.1-1mu and reducing the capacity therebetween without drift. CONSTITUTION:A gate insulating film 2 and a high melting point metal film 3 are laminated on a p-type silicon substrate 1, a resist mask is provided, only the film 3 is controlled in high accuracy at l2'=0.1-1mu in etching the film 3 to form a scratch thereon, and the mask is removed. Then, the electrode 3 is self-matched for an off-set gate 2'. Then, with a resist mask 4' an n-type ion is implanted to form a drain 5 and a source 6 thereon. Then, the capacity between the drain and the gate electrode is remarkably reduced due to the presence of the gate region 2' to extremely improve the frequency response of the FET. Then, with a mask 4'' the off-set gate 2' is coated, an n-type ion is implanted to form a layer 6' thereon. Thereafter, a SiO2 film 7 is coated, an opening is selectively formed, and electrodes 8-10 are formed to complete the semiconductor device.
JP2440679A 1979-03-05 1979-03-05 Semiconductor device Pending JPS55117280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2440679A JPS55117280A (en) 1979-03-05 1979-03-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2440679A JPS55117280A (en) 1979-03-05 1979-03-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55117280A true JPS55117280A (en) 1980-09-09

Family

ID=12137281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2440679A Pending JPS55117280A (en) 1979-03-05 1979-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117280A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622343B2 (en) 1992-10-30 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622343B2 (en) 1992-10-30 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same

Similar Documents

Publication Publication Date Title
JPS5688354A (en) Semiconductor integrated circuit device
JPS57192063A (en) Manufacture of semiconductor device
JPS55117280A (en) Semiconductor device
JPS56155531A (en) Manufacture of semiconductor device
JPS577972A (en) Insulated gate type thin film transistor
JPS56104474A (en) Silicon semiconductor device
JPS56147447A (en) Manufacture of mosic
JPS5779670A (en) Manufacture of semiconductor device
JPS54129983A (en) Manufacture of semiconductor device
JPS57103358A (en) Manufacture of amorphous silicon mosfet
JPS5718363A (en) Msis type semiconductor element
JPS56126957A (en) Manufacture of semiconductor device
JPS5721866A (en) Manufacture of insulated gate type field effect transistor
JPS6425576A (en) Manufacture of semiconductor device
JPS57145372A (en) Manufacture of semiconductor device
JPS57178376A (en) Junction type field-effect transistor
JPS56135967A (en) Manufacture of semiconductor device
JPS5563876A (en) Field-effect semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5737882A (en) Compound semiconductor device and production thereof
JPS5670669A (en) Longitudinal semiconductor device
JPS5762566A (en) Manufacture of semiconductor device
JPS5764972A (en) Silicon gate type field-effect semiconductor device and manufacture thereof
JPS5559775A (en) Method of fabricating semiconductor device
JPS5752169A (en) Semiconductor device and manufacture thereof