JPS575359A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS575359A
JPS575359A JP7782080A JP7782080A JPS575359A JP S575359 A JPS575359 A JP S575359A JP 7782080 A JP7782080 A JP 7782080A JP 7782080 A JP7782080 A JP 7782080A JP S575359 A JPS575359 A JP S575359A
Authority
JP
Japan
Prior art keywords
layer
forming
buried
type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7782080A
Other languages
Japanese (ja)
Inventor
Saburo Oikawa
Susumu Murakami
Yoshio Terasawa
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7782080A priority Critical patent/JPS575359A/en
Publication of JPS575359A publication Critical patent/JPS575359A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate

Abstract

PURPOSE:To provide high withstand voltage without loss of switching characteristic and to enable the interruption of large current in a field effect transistor having a buried gate layer by forming the density and thickness of the gate layer in two-stage structure. CONSTITUTION:A p<+> type anode layer 2 is formed on one surface of an n<-> type semiconductor substrate 1, and the first buried gate layer 31 of high impurity density and the second buried gate layer 32 for forming a channel 5 are formed on the other surface. After an n type epitaxial layer 4 is formed on the surface of forming the buried layer, an n<+> type cathode layer 6 is formed. Then, the part of the layer 4 is etched and removed, and a gate electrode leading recess is formed. Thereafter, a silicon oxidized film 7 is formed for protecting the surface, a gate electrode 81, a cathode electrode 82 and an anode electrode 83 are formed, and a field effect thyristor is completed. In figure, reference numeral 9 illustrates a cathode electrode pressing cathode electrode plate.
JP7782080A 1980-06-11 1980-06-11 Semiconductor device Pending JPS575359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7782080A JPS575359A (en) 1980-06-11 1980-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7782080A JPS575359A (en) 1980-06-11 1980-06-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS575359A true JPS575359A (en) 1982-01-12

Family

ID=13644666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7782080A Pending JPS575359A (en) 1980-06-11 1980-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS575359A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850775A (en) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp Static induction type thyristor
JPS6077463A (en) * 1983-10-05 1985-05-02 Toyo Electric Mfg Co Ltd Static induction thyristor
JPS60175462A (en) * 1984-02-21 1985-09-09 Sanyo Electric Co Ltd Manufacture of static induction type semiconductor device
JPS629670A (en) * 1985-07-08 1987-01-17 Toyo Electric Mfg Co Ltd Semiconductor device having buried gate
JPS63147368A (en) * 1986-12-11 1988-06-20 Res Dev Corp Of Japan Double side gate electrostatic induction thyristor and manufacture thereof
US20140030829A1 (en) * 2008-09-26 2014-01-30 Osram Opto Semiconductors Gmbh Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850775A (en) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp Static induction type thyristor
JPH0324071B2 (en) * 1981-09-19 1991-04-02 Mitsubishi Electric Corp
JPS6077463A (en) * 1983-10-05 1985-05-02 Toyo Electric Mfg Co Ltd Static induction thyristor
JPH0329190B2 (en) * 1983-10-05 1991-04-23 Toyo Electric Mfg Co Ltd
JPS60175462A (en) * 1984-02-21 1985-09-09 Sanyo Electric Co Ltd Manufacture of static induction type semiconductor device
JPS629670A (en) * 1985-07-08 1987-01-17 Toyo Electric Mfg Co Ltd Semiconductor device having buried gate
JPS63147368A (en) * 1986-12-11 1988-06-20 Res Dev Corp Of Japan Double side gate electrostatic induction thyristor and manufacture thereof
US20140030829A1 (en) * 2008-09-26 2014-01-30 Osram Opto Semiconductors Gmbh Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof

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