JPS5728344A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5728344A
JPS5728344A JP10385280A JP10385280A JPS5728344A JP S5728344 A JPS5728344 A JP S5728344A JP 10385280 A JP10385280 A JP 10385280A JP 10385280 A JP10385280 A JP 10385280A JP S5728344 A JPS5728344 A JP S5728344A
Authority
JP
Japan
Prior art keywords
layer
film
polyimide
pattern
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10385280A
Other languages
Japanese (ja)
Inventor
Yoshiichi Tobinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10385280A priority Critical patent/JPS5728344A/en
Publication of JPS5728344A publication Critical patent/JPS5728344A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To make the bonding on resin films highly reliable, by forming a metal pattern having the surroundings covered with the second polyimide film on the first polyimide film on a metal layer, and forming a pad metal on the metal pattern through a polycrystalline Si layer. CONSTITUTION:For example, on a substrate 1 having an Al wiring 2 of the first layer, liquid polyimide is applied, heat-treated and hardened to form a first polyimide resin film 3. An Al pattern 14 of the second layer is formed on the pad, and then polyimide is applied to the pad. This is prebaked at about 90 deg.C, and the opening connected to the Al pattern 14 is formed by photoetching. After this has been hardened and baked (300-500 deg.C), a polycrystalline Si layer 7 and an Al layer 8 are formed and heat-treated to obtain ohmic contacts. Subsequently, a wire 9 is bonded to the Al film 8. Thus, the second Al layer 14 can be bonded onto the resin films 3, 5. Because they are alloyed with the upper Al film 8 and the polycrystalline Si layer, separation or the like can be prevented after bonding.
JP10385280A 1980-07-29 1980-07-29 Semiconductor device Pending JPS5728344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10385280A JPS5728344A (en) 1980-07-29 1980-07-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10385280A JPS5728344A (en) 1980-07-29 1980-07-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5728344A true JPS5728344A (en) 1982-02-16

Family

ID=14364965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10385280A Pending JPS5728344A (en) 1980-07-29 1980-07-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728344A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590327A (en) * 1991-09-27 1993-04-09 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
JP2018159872A (en) * 2017-03-23 2018-10-11 住友電気工業株式会社 Semiconductor optical element and manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590327A (en) * 1991-09-27 1993-04-09 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
JP2018159872A (en) * 2017-03-23 2018-10-11 住友電気工業株式会社 Semiconductor optical element and manufacturing method therefor

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