JPS6482652A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6482652A
JPS6482652A JP62242105A JP24210587A JPS6482652A JP S6482652 A JPS6482652 A JP S6482652A JP 62242105 A JP62242105 A JP 62242105A JP 24210587 A JP24210587 A JP 24210587A JP S6482652 A JPS6482652 A JP S6482652A
Authority
JP
Japan
Prior art keywords
opening
cracking
etched
bonding
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62242105A
Other languages
Japanese (ja)
Inventor
Takeshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62242105A priority Critical patent/JPS6482652A/en
Publication of JPS6482652A publication Critical patent/JPS6482652A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent an internal element from cracking and to improve reliability by providing an insulating resin film in a first opening, and providing a bonding second opening inside the first opening. CONSTITUTION:Metal wirings 3 made of aluminum or the like are provided on a thermal oxide film 2 provided on a semiconductor substrate 1. Then, an insulating film 4 is deposited on a surface including the wirings 3, and etched to form an opening 5. The surface including the opening 5 is coated thickly with an insulating resin film 6, and etched to form a bonding opening 7 inside the opening 5. Thus, it can absorb a stress due to resin sealing, prevents an internal element from cracking, and enhance its reliability without deteriorating electric characteristics.
JP62242105A 1987-09-25 1987-09-25 Manufacture of semiconductor device Pending JPS6482652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242105A JPS6482652A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242105A JPS6482652A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482652A true JPS6482652A (en) 1989-03-28

Family

ID=17084371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242105A Pending JPS6482652A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482652A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005050963A (en) * 2003-07-31 2005-02-24 Seiko Epson Corp Semiconductor device, electronic device, electronic apparatus and manufacturing method of semiconductor device
JP2007294605A (en) * 2006-04-24 2007-11-08 Oki Data Corp Semiconductor device, led head, and image forming apparatus
JP2009538537A (en) * 2006-05-23 2009-11-05 フリースケール セミコンダクター インコーポレイテッド Passivation and contact surrounded by polyimide and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214625A (en) * 1986-03-17 1987-09-21 Hitachi Micro Comput Eng Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214625A (en) * 1986-03-17 1987-09-21 Hitachi Micro Comput Eng Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005050963A (en) * 2003-07-31 2005-02-24 Seiko Epson Corp Semiconductor device, electronic device, electronic apparatus and manufacturing method of semiconductor device
JP2007294605A (en) * 2006-04-24 2007-11-08 Oki Data Corp Semiconductor device, led head, and image forming apparatus
JP2009538537A (en) * 2006-05-23 2009-11-05 フリースケール セミコンダクター インコーポレイテッド Passivation and contact surrounded by polyimide and method of manufacturing the same

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