JPS5472958A - Electrode structure of semiconductor device - Google Patents

Electrode structure of semiconductor device

Info

Publication number
JPS5472958A
JPS5472958A JP13998677A JP13998677A JPS5472958A JP S5472958 A JPS5472958 A JP S5472958A JP 13998677 A JP13998677 A JP 13998677A JP 13998677 A JP13998677 A JP 13998677A JP S5472958 A JPS5472958 A JP S5472958A
Authority
JP
Japan
Prior art keywords
layer
film
opening part
metal layer
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13998677A
Other languages
Japanese (ja)
Inventor
Yuji Hara
Tatsumi Shirasu
Keiji Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13998677A priority Critical patent/JPS5472958A/en
Publication of JPS5472958A publication Critical patent/JPS5472958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE: To prevent the generation of a crack and te breakaway of an electrode by adhering a bump electrode layer via a base metal layer inside an opening part provided between upper and lower passivation films and by providing an adhesion reinforcing metal layer.
CONSTITUTION: Semiconductor substrate 10 is provided with passivation film 12 formed covering the surface of the substrate, wiring layer 14 formed on film 12, passivation film 16 with opening part 16A exposing one part of layer 14 while covering layer 14 and film 12 and opening part 16B exposing one part of film 12 under the bonding expected region and wider than it, bump electrode layer 20 formed adhering to film 12 via base metal layer 18 inside opening part 16B, and adhesion- reinforcing metal layer 24 partially interposing between layer 18 and film 12, thereby interconnecting layer 20 and layer 14 via opening part 16A.
COPYRIGHT: (C)1979,JPO&Japio
JP13998677A 1977-11-24 1977-11-24 Electrode structure of semiconductor device Pending JPS5472958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13998677A JPS5472958A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13998677A JPS5472958A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5472958A true JPS5472958A (en) 1979-06-11

Family

ID=15258272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13998677A Pending JPS5472958A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5472958A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131455A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131455A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Semiconductor device

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