JPS57193025A - Manufacture of film - Google Patents

Manufacture of film

Info

Publication number
JPS57193025A
JPS57193025A JP56078848A JP7884881A JPS57193025A JP S57193025 A JPS57193025 A JP S57193025A JP 56078848 A JP56078848 A JP 56078848A JP 7884881 A JP7884881 A JP 7884881A JP S57193025 A JPS57193025 A JP S57193025A
Authority
JP
Japan
Prior art keywords
film
inn
plasma
sn4n3
ata
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56078848A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP56078848A priority Critical patent/JPS57193025A/en
Publication of JPS57193025A publication Critical patent/JPS57193025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain an equal film consisting of InN, Sn4N3 by a method wherein in or Sn by metal organic compound or halogenide and nitride gas are induced in a reaction container at 1 ata. or less and are reacted by plasma atmosphere. CONSTITUTION:(CH3)In, (C2H5)3In, (CH3)4In, (C2H5)4In, and (CH3)2SnCl2 or the like are used as starting substance and these are induced in a reaction container 4 kept at 1 ata. or less by using N2 or NH3 as carrier gas. Immediately after spraying from a nozzle 6, these are reaced by forming plasma at a high-frequency electric field between the nozzle and a substrate and a transparent conductive film composing InN, In3Sn4 or the mixture as a principal component is formed on the substrate 1 at 100-300 deg.C. An InN film by this composition shows a low sheet resistance of 5-20OMEGA/cm<2>. Furthermore, a resistance of 1-5OMEGA/cm<2> will be obtained by mixing 2-20% of Sn4N3 into the InN film. The film will not completely be cloudy even if the film is immersed in the plasma hydrogen of reduction atmosphere for one hour at 300 deg.C and the film is very superior transparent conductive film.
JP56078848A 1981-05-25 1981-05-25 Manufacture of film Pending JPS57193025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56078848A JPS57193025A (en) 1981-05-25 1981-05-25 Manufacture of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56078848A JPS57193025A (en) 1981-05-25 1981-05-25 Manufacture of film

Publications (1)

Publication Number Publication Date
JPS57193025A true JPS57193025A (en) 1982-11-27

Family

ID=13673240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56078848A Pending JPS57193025A (en) 1981-05-25 1981-05-25 Manufacture of film

Country Status (1)

Country Link
JP (1) JPS57193025A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128477A (en) * 1987-11-12 1989-05-22 Ricoh Co Ltd Amorphous silicon photosensor
JPH01168075A (en) * 1987-12-23 1989-07-03 Ricoh Co Ltd Optical sensor comprising amorphous silicon
JPH05145123A (en) * 1991-11-25 1993-06-11 Matsushita Electric Ind Co Ltd Ferroelectric thin film composition and its manufacture
US5429983A (en) * 1993-12-27 1995-07-04 Fujitsu Limited Method of manufacturing semiconductor device
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (en) * 1971-09-06 1973-05-22
JPS4851584A (en) * 1971-10-27 1973-07-19
JPS5044776A (en) * 1973-08-24 1975-04-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (en) * 1971-09-06 1973-05-22
JPS4851584A (en) * 1971-10-27 1973-07-19
JPS5044776A (en) * 1973-08-24 1975-04-22

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128477A (en) * 1987-11-12 1989-05-22 Ricoh Co Ltd Amorphous silicon photosensor
JPH01168075A (en) * 1987-12-23 1989-07-03 Ricoh Co Ltd Optical sensor comprising amorphous silicon
JPH05145123A (en) * 1991-11-25 1993-06-11 Matsushita Electric Ind Co Ltd Ferroelectric thin film composition and its manufacture
US5429983A (en) * 1993-12-27 1995-07-04 Fujitsu Limited Method of manufacturing semiconductor device
US5620924A (en) * 1993-12-27 1997-04-15 Fujitsu Limited Method of preventing deterioration of film quality of transparent conductive film
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER

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