JPS55113322A - Impurity diffusion - Google Patents

Impurity diffusion

Info

Publication number
JPS55113322A
JPS55113322A JP2043479A JP2043479A JPS55113322A JP S55113322 A JPS55113322 A JP S55113322A JP 2043479 A JP2043479 A JP 2043479A JP 2043479 A JP2043479 A JP 2043479A JP S55113322 A JPS55113322 A JP S55113322A
Authority
JP
Japan
Prior art keywords
film
diffusion layer
iiiwv
sio
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2043479A
Other languages
Japanese (ja)
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2043479A priority Critical patent/JPS55113322A/en
Publication of JPS55113322A publication Critical patent/JPS55113322A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To coat one or more kinds of W, Mo, Ta, Hf on the surface of IIIWV group semiconductor, to provide a diffusion layer through this metal film without introducing a local distortion and to provide an ohmic electrode.
CONSTITUTION: An opening is made on the SiO2 film provided on p-type InP substrate 11, and this opening is covered by evaporating W film 13. Next, this is exposed to a Zn atomosphere. Since Zn hardly reacts with W, it passes through extremely small holes of the W film and do not pass through the SiO2 film so that Zn diffusion layer 14 is formed. In particular, II group elements hardly react with W, Mo, Ta, Hf, so that they can be easily diffused in IIIWV group semiconductor compound. Further, the alloying reaction between W film 13 and the InP substrate is extremely small, so that an ohmic electrode with small contact resistance is obtained. Also, IV or VI group elements can be diffused. But, in this case, compounds with metal film coating 13 are formed, so that the diffusion layer is made shallow.
COPYRIGHT: (C)1980,JPO&Japio
JP2043479A 1979-02-22 1979-02-22 Impurity diffusion Pending JPS55113322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2043479A JPS55113322A (en) 1979-02-22 1979-02-22 Impurity diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2043479A JPS55113322A (en) 1979-02-22 1979-02-22 Impurity diffusion

Publications (1)

Publication Number Publication Date
JPS55113322A true JPS55113322A (en) 1980-09-01

Family

ID=12026929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2043479A Pending JPS55113322A (en) 1979-02-22 1979-02-22 Impurity diffusion

Country Status (1)

Country Link
JP (1) JPS55113322A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249407A (en) * 1994-03-11 1995-09-26 Saga Denki Kogyo Kk Battery liquid feeder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249407A (en) * 1994-03-11 1995-09-26 Saga Denki Kogyo Kk Battery liquid feeder

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