JPS565545A - Transfer mask for x-ray exposure and its production - Google Patents
Transfer mask for x-ray exposure and its productionInfo
- Publication number
- JPS565545A JPS565545A JP8230679A JP8230679A JPS565545A JP S565545 A JPS565545 A JP S565545A JP 8230679 A JP8230679 A JP 8230679A JP 8230679 A JP8230679 A JP 8230679A JP S565545 A JPS565545 A JP S565545A
- Authority
- JP
- Japan
- Prior art keywords
- soft
- pattern
- transmission layer
- ray
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To enable the formation of a soft X-ray absorbing layer with high accuracy and eliminate its damaging owing to physical contact by providing the soft X-ray absorbing layer within a soft X-ray transmission layer. CONSTITUTION:An epitaxial layer is grown on a silicon substrate 4 of plane bearings (1, 0, 0) to form a soft X-ray transmission layer 2. A thermal oxide film is deposited on the back side of the substrate 4 and an etching mask pattern 5 for forming supports 3 is formed. Next, resist is coated on the transmission layer and after a resist pattern 6 is formed, ions of boron or the like are implanted to harden the resist and plasma-etch part of the transmission layer 2. Next, the portions on the resist pattern 6' are annealed, after which a soft X-ray absorbing metal 7 is deposited. Next, the pattern 6' is removed, by which the soft X-ray absorbing layer 1 is formed as a pattern in the etched portions of the soft X-ray transmission layer 2. Further, the substrate 4 is etched by using the etching mask pattern 5 on the substrate 4, whereby the supports 3 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8230679A JPS565545A (en) | 1979-06-27 | 1979-06-27 | Transfer mask for x-ray exposure and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8230679A JPS565545A (en) | 1979-06-27 | 1979-06-27 | Transfer mask for x-ray exposure and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS565545A true JPS565545A (en) | 1981-01-21 |
JPS641927B2 JPS641927B2 (en) | 1989-01-13 |
Family
ID=13770862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8230679A Granted JPS565545A (en) | 1979-06-27 | 1979-06-27 | Transfer mask for x-ray exposure and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS565545A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0234547A2 (en) * | 1986-02-28 | 1987-09-02 | Sharp Kabushiki Kaisha | Method of manufacturing photomask and photo-mask manufactured thereby |
-
1979
- 1979-06-27 JP JP8230679A patent/JPS565545A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0234547A2 (en) * | 1986-02-28 | 1987-09-02 | Sharp Kabushiki Kaisha | Method of manufacturing photomask and photo-mask manufactured thereby |
US5087535A (en) * | 1986-02-28 | 1992-02-11 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
US5457006A (en) * | 1986-02-28 | 1995-10-10 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
Also Published As
Publication number | Publication date |
---|---|
JPS641927B2 (en) | 1989-01-13 |
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