JPS5789257A - Manufacture of insulation gate type field effect transistor - Google Patents

Manufacture of insulation gate type field effect transistor

Info

Publication number
JPS5789257A
JPS5789257A JP16608480A JP16608480A JPS5789257A JP S5789257 A JPS5789257 A JP S5789257A JP 16608480 A JP16608480 A JP 16608480A JP 16608480 A JP16608480 A JP 16608480A JP S5789257 A JPS5789257 A JP S5789257A
Authority
JP
Japan
Prior art keywords
region
insulation film
thick
intended
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16608480A
Other languages
Japanese (ja)
Other versions
JPH0126192B2 (en
Inventor
Tadayoshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16608480A priority Critical patent/JPS5789257A/en
Publication of JPS5789257A publication Critical patent/JPS5789257A/en
Publication of JPH0126192B2 publication Critical patent/JPH0126192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To make it possible to form each region of MOS simultaneously by introducing impurity through a thick insulation film formed in the intended region of an off-set gate and a thin film formed in the intended regions of a source and drain on a semiconductor substrate. CONSTITUTION:An insulation film 42 of 1mu thick is formed in the region where no element region is to be formed and an insulation film 43 of 400-1,000Angstrom thick is formed in the region where an element region is to be formed. After laminating over the entire surface a metal film 44 which is to be a gate electrode and an insulation film 44, and an opening is made in the intended offset gate region and thick insulation films 481 and 482 are formed. The metal film 44 and the insulation film 45 in the intended regions for the source and the drain are removed. When the impurity is introduced, the source region 50 and the drain region 49 are formed through the thin insulation film and the offset regions 46 and 48 are formed through the thick insulation film 481 and 482.
JP16608480A 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor Granted JPS5789257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16608480A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16608480A JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5789257A true JPS5789257A (en) 1982-06-03
JPH0126192B2 JPH0126192B2 (en) 1989-05-22

Family

ID=15824681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16608480A Granted JPS5789257A (en) 1980-11-25 1980-11-25 Manufacture of insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5789257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (en) * 1983-09-20 1985-04-13 Seiko Epson Corp Mos type transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064473A (en) * 1983-09-20 1985-04-13 Seiko Epson Corp Mos type transistor

Also Published As

Publication number Publication date
JPH0126192B2 (en) 1989-05-22

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