JPS57162336A - Coating method of resist on wafer - Google Patents

Coating method of resist on wafer

Info

Publication number
JPS57162336A
JPS57162336A JP4705881A JP4705881A JPS57162336A JP S57162336 A JPS57162336 A JP S57162336A JP 4705881 A JP4705881 A JP 4705881A JP 4705881 A JP4705881 A JP 4705881A JP S57162336 A JPS57162336 A JP S57162336A
Authority
JP
Japan
Prior art keywords
resist
wafer
outer periphery
rotating
circular shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4705881A
Other languages
Japanese (ja)
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4705881A priority Critical patent/JPS57162336A/en
Publication of JPS57162336A publication Critical patent/JPS57162336A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve the manufacturing yield of a semiconductor device by coating a resist on a wafer of approximately circular shape and then removing the resist of the outer periphery while rotating the wafer, thereby preventing the notch of the resist at the outer periphery. CONSTITUTION:A resist 2 is coated while rotating a wafer 1 of approximately circular shape, and the resist 2'' is then removed at the outer periphery while rotating the wafer 1. For example, a positive resist 2 is rotatably coated on the wafer 1 placed on a rotary base 3, an energy beam such as ultraviolet ray is emitted through an optical fiber 5 to the resist 2'' of the outer periphery while rotating the wafer, thereby allowing the resist 2'' of the outer periphery to be sensed with the light. Thereafter, when the resist 2 of the center is exposed in the prescribed pattern and is developed, the resist 2'' of the periphery is simultaneously removed.
JP4705881A 1981-03-30 1981-03-30 Coating method of resist on wafer Pending JPS57162336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4705881A JPS57162336A (en) 1981-03-30 1981-03-30 Coating method of resist on wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4705881A JPS57162336A (en) 1981-03-30 1981-03-30 Coating method of resist on wafer

Publications (1)

Publication Number Publication Date
JPS57162336A true JPS57162336A (en) 1982-10-06

Family

ID=12764550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4705881A Pending JPS57162336A (en) 1981-03-30 1981-03-30 Coating method of resist on wafer

Country Status (1)

Country Link
JP (1) JPS57162336A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138335A (en) * 1983-01-28 1984-08-08 Toshiba Corp Exposing device for resist on end portion of wafer
JPS59118436U (en) * 1983-01-31 1984-08-10 松下電工株式会社 Structure of washstand storage area
JPS61278148A (en) * 1985-06-01 1986-12-09 Nippon Gakki Seizo Kk Forming method for glass coating
JPS62133746A (en) * 1985-12-06 1987-06-16 Hitachi Ltd Arrangement of semiconductor element
JPS6486520A (en) * 1987-11-04 1989-03-31 Ricoh Kk Exposure method
JPH0370119A (en) * 1989-08-09 1991-03-26 Fujitsu Ltd Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111573A (en) * 1974-07-19 1976-01-29 Nippon Electric Co Handotaisoshino seizohoho
JPS5337706A (en) * 1976-09-18 1978-04-07 Nisshin Oil Mills Ltd:The Production of fatty acids
JPS5512750A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Resist application device
JPS57126134A (en) * 1981-01-28 1982-08-05 Nec Corp Processing system for wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111573A (en) * 1974-07-19 1976-01-29 Nippon Electric Co Handotaisoshino seizohoho
JPS5337706A (en) * 1976-09-18 1978-04-07 Nisshin Oil Mills Ltd:The Production of fatty acids
JPS5512750A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Resist application device
JPS57126134A (en) * 1981-01-28 1982-08-05 Nec Corp Processing system for wafer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138335A (en) * 1983-01-28 1984-08-08 Toshiba Corp Exposing device for resist on end portion of wafer
JPS59118436U (en) * 1983-01-31 1984-08-10 松下電工株式会社 Structure of washstand storage area
JPH0354595Y2 (en) * 1983-01-31 1991-12-03
JPS61278148A (en) * 1985-06-01 1986-12-09 Nippon Gakki Seizo Kk Forming method for glass coating
JPS62133746A (en) * 1985-12-06 1987-06-16 Hitachi Ltd Arrangement of semiconductor element
JPS6486520A (en) * 1987-11-04 1989-03-31 Ricoh Kk Exposure method
JPH0370119A (en) * 1989-08-09 1991-03-26 Fujitsu Ltd Manufacture of semiconductor device
JP2586144B2 (en) * 1989-08-09 1997-02-26 富士通株式会社 Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPS57200042A (en) Exposure method for chemically machinable photosensitive glass
JPS5511217A (en) Pattern forming method using radiation sensitive high polymer
JPS57162336A (en) Coating method of resist on wafer
JPS5493974A (en) Projection-system mask alignment unit
JPS57126134A (en) Processing system for wafer
JPS649618A (en) Pattern formation
JPS5413777A (en) Photo resist coater of semiconductor wafers
JPS5748462A (en) Grinding attachment for modifying automatically form
JPS5726170A (en) Formation of al or al alloy pattern
JPS57101327A (en) Wafer carrier in ion implanting device
JPS5388728A (en) Method of forming pattern
JPS5724538A (en) Preparation of semiconductor device
JPS6412528A (en) Resist development device
JPS523391A (en) Mount used for semiconductor laser
JPS5621328A (en) Method of making pattern
JPS56160035A (en) Applying device of liquid
JPS5588057A (en) Production of photo mask
JPS57122439A (en) Optical mask
JPS5399772A (en) Optical mask
JPS56144536A (en) Pattern formation and p-n junction formation
JPS5617348A (en) Exposing method
JPS5596681A (en) Method of fabricating semiconductor device
JPS5255867A (en) Exposure method
JPS57112020A (en) Exposure of electron beam
JPS5388578A (en) Production of semiconductor device