JPS5743417A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5743417A JPS5743417A JP11875580A JP11875580A JPS5743417A JP S5743417 A JPS5743417 A JP S5743417A JP 11875580 A JP11875580 A JP 11875580A JP 11875580 A JP11875580 A JP 11875580A JP S5743417 A JPS5743417 A JP S5743417A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxygen
- diffused
- boron
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 5
- 239000001301 oxygen Substances 0.000 abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005247 gettering Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- -1 oxygen ions Chemical class 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To remove a fine defect on an epitaxial layer of a semiconductor device by the gettering effect of oxygen ion implantation and heat treatment by injection oxygen ions and heat treating when impurity is doped on a semiconductor substrate. CONSTITUTION:A buried layer 2 is formed on a silicon substrate 1, and epitaxial layer 3 is grown on the substrate 1, boron is the diffused to form an isolation region 4, and phosphorus is diffused in the layer 3 to form an impurity region 5. Then, ions are implanted to the layer 3 through a boron thermally oxidized film 7, thereby forming a p type ion implantation layer 9. At this time oxygen ions are implanted to dope oxygen on the layer 9. Subsequently, a resist film 8 is removed, the remaining film is then heat teated. At this time the boron is diffused, and the defect of the layer 3 can be removed by the gettering effect of the fine defect due to the out- diffusion of the oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11875580A JPS5743417A (en) | 1980-08-28 | 1980-08-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11875580A JPS5743417A (en) | 1980-08-28 | 1980-08-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5743417A true JPS5743417A (en) | 1982-03-11 |
Family
ID=14744247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11875580A Pending JPS5743417A (en) | 1980-08-28 | 1980-08-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5743417A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257170A (en) * | 1984-06-01 | 1985-12-18 | Rohm Co Ltd | Manufacture of semiconductor device |
| US6255153B1 (en) | 1997-12-30 | 2001-07-03 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device |
| US8517197B2 (en) | 2006-07-19 | 2013-08-27 | Du Pont-Mitsui Polychemicals Co., Ltd. | Synthetic resin hollow body |
-
1980
- 1980-08-28 JP JP11875580A patent/JPS5743417A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257170A (en) * | 1984-06-01 | 1985-12-18 | Rohm Co Ltd | Manufacture of semiconductor device |
| US6255153B1 (en) | 1997-12-30 | 2001-07-03 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device |
| US8517197B2 (en) | 2006-07-19 | 2013-08-27 | Du Pont-Mitsui Polychemicals Co., Ltd. | Synthetic resin hollow body |
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