JPS57172767A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57172767A JPS57172767A JP5700281A JP5700281A JPS57172767A JP S57172767 A JPS57172767 A JP S57172767A JP 5700281 A JP5700281 A JP 5700281A JP 5700281 A JP5700281 A JP 5700281A JP S57172767 A JPS57172767 A JP S57172767A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- sio2
- region
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 14
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the disconnection of a metal electrode provided at the fringe section of an SiO2 film by a method wherein a thin Si3N4 film is provided at a scheduling region for feeding an electrode and the film is surrounded by a thick SiO2 film and the Si3N4 film is changed to the SiO2 film by heat treatment. At that time, the fringe section of the surrounded SiO2 film is form in birdbeak shape. CONSTITUTION:A thick field SiO2 film 12 is formed at the circumference section of a P type Si substrate 11 and a polycrystalline Si gate electrode 15 is provided at the predetermined region of the substrate 11 surrounded by the film 12 through a thin gate SiO2 film 13. The whole surface including the gate electrode 15 is covered with a thin Si3N4 film 16. Next, ion is implanted through the film 16 to form N<+> type regions 17 in the substrate 11 at the opposite sides of the electrode 15 and the film 16 is left only at a scheduling region for feeding the electrode at one side of the region 17 and the remaining film 16 is eliminated. After that, a thick SiO2 film 19 is generated on the exposed semiconductor layer by heat treatment under oxide atmosphere. At the same time, the volume of the film 16 is increased by utilizing a difference in oxide speed to smooth the fringe section 21 of the film 19 in birdbeak shape. Next, the film 16 is eliminated and electrode metal 22 is formed on the exposed region 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5700281A JPS57172767A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5700281A JPS57172767A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57172767A true JPS57172767A (en) | 1982-10-23 |
Family
ID=13043262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5700281A Pending JPS57172767A (en) | 1981-04-17 | 1981-04-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172767A (en) |
-
1981
- 1981-04-17 JP JP5700281A patent/JPS57172767A/en active Pending
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