JPS57149759A - Tape carrier for semiconductor - Google Patents

Tape carrier for semiconductor

Info

Publication number
JPS57149759A
JPS57149759A JP3493981A JP3493981A JPS57149759A JP S57149759 A JPS57149759 A JP S57149759A JP 3493981 A JP3493981 A JP 3493981A JP 3493981 A JP3493981 A JP 3493981A JP S57149759 A JPS57149759 A JP S57149759A
Authority
JP
Japan
Prior art keywords
layers
tin
solder
lead
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3493981A
Other languages
Japanese (ja)
Other versions
JPS6227733B2 (en
Inventor
Ryozo Yamagishi
Osamu Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP3493981A priority Critical patent/JPS57149759A/en
Publication of JPS57149759A publication Critical patent/JPS57149759A/en
Publication of JPS6227733B2 publication Critical patent/JPS6227733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839Assembly of a flat lead with an insulating support, e.g. for TAB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof

Abstract

PURPOSE:To remove a bridge in the case when assembling a semiconductor device by forming at least two layers or more of lead or a solder layer, the main body thereof is lead, and tin or a solder layer, the main body thereof is tin, onto the tape carrier shaped by bonding copper or copper alloy foil onto a film through an electroplating method and forming the uppermost layer in the solder layer of tin. CONSTITUTION:The tape carrier is manufactured in such a manner that the pattern-shaped copper or copper alloy foil 2 is pasted onto the heatproof plastic film 1 by using adhesives 3. The copper or copper alloy foil 2 is coated with the solder layers 4 consisting of pure lead through the electroplating method, and the layers 4 are coated similarly with the solder layers 5 of pure tin formed through the electroplating method. Accordingly, at least two layers or more of the solder layers are shaped, and the solder layer of tin is exposed to the surface under the last condition. Lead as the composition of the whole solder layers is 80-98wt% here. Consequently, wetting property with a semiconductor element is improved, and the bridges are not generated among patterns.
JP3493981A 1981-03-11 1981-03-11 Tape carrier for semiconductor Granted JPS57149759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3493981A JPS57149759A (en) 1981-03-11 1981-03-11 Tape carrier for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3493981A JPS57149759A (en) 1981-03-11 1981-03-11 Tape carrier for semiconductor

Publications (2)

Publication Number Publication Date
JPS57149759A true JPS57149759A (en) 1982-09-16
JPS6227733B2 JPS6227733B2 (en) 1987-06-16

Family

ID=12428148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3493981A Granted JPS57149759A (en) 1981-03-11 1981-03-11 Tape carrier for semiconductor

Country Status (1)

Country Link
JP (1) JPS57149759A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471591A (en) * 1987-09-09 1989-03-16 Sumitomo Spec Metals Joining method for metal or alloy piece
JPH0395990A (en) * 1989-09-07 1991-04-22 Sumitomo Special Metals Co Ltd Soldering method for electric circuit and the electronic circuit board
CN104668551A (en) * 2015-01-28 2015-06-03 哈尔滨工业大学深圳研究生院 Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210123683A (en) 2020-04-03 2021-10-14 삼성전자주식회사 Signal receiver and operation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471591A (en) * 1987-09-09 1989-03-16 Sumitomo Spec Metals Joining method for metal or alloy piece
JPH0395990A (en) * 1989-09-07 1991-04-22 Sumitomo Special Metals Co Ltd Soldering method for electric circuit and the electronic circuit board
CN104668551A (en) * 2015-01-28 2015-06-03 哈尔滨工业大学深圳研究生院 Bimodal distribution nano-silver paste serving as thermal interface material and preparation method of bimodal distribution nano-silver paste
CN104668551B (en) * 2015-01-28 2017-01-04 哈尔滨工业大学深圳研究生院 A kind of bimodal distribution nano silver paste as thermal interfacial material and preparation method thereof

Also Published As

Publication number Publication date
JPS6227733B2 (en) 1987-06-16

Similar Documents

Publication Publication Date Title
JPS57149759A (en) Tape carrier for semiconductor
JPS5548954A (en) Manufacturing of film carrier
JPS57188848A (en) Circuit element
JPS5757886A (en) Heat resistant silver coated conductor
EP0193907A3 (en) Hybrid and multi-layer circuitry
JPS5771159A (en) Heterogeneous electroplating method for circuit substrate
JPS5748253A (en) Lead frame for semiconductor device
JPS57149741A (en) Bonding method for semiconductor pellet
JPS5519846A (en) Lead frame for resin sealed type semiconductor device
JPS5460557A (en) Solder electrode forming method
JPS58127355A (en) Lead frame
JPS54114973A (en) Semiconductor device
JPS57139949A (en) Resin sealing type semiconductor device
JPS5227438A (en) Adhesion of components
JPS53117970A (en) Resin seal type semiconductor device
JPS54109769A (en) Semiconductor device connecting tape
JPS54121670A (en) Semiconductor device and its manufacture
JPS54140469A (en) Glass sealing semicondutor device
JPS5324268A (en) Pro duction of semiconductor device and bonding wire for the same
JPS544067A (en) Electrode forming method of semiconductor device
JPS57211763A (en) Surface treatment for lead frame for semiconductor
JPS5322366A (en) Electronic part
JPS531468A (en) Formation of semiconductor electrode
JPS54121057A (en) Semiconductor device
JPS5314558A (en) Semiconductor device