JPS57149738A - Forming method for solid film - Google Patents

Forming method for solid film

Info

Publication number
JPS57149738A
JPS57149738A JP3509881A JP3509881A JPS57149738A JP S57149738 A JPS57149738 A JP S57149738A JP 3509881 A JP3509881 A JP 3509881A JP 3509881 A JP3509881 A JP 3509881A JP S57149738 A JPS57149738 A JP S57149738A
Authority
JP
Japan
Prior art keywords
resist
film
insulating film
lift
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3509881A
Other languages
Japanese (ja)
Inventor
Hiroyuki Fujisada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3509881A priority Critical patent/JPS57149738A/en
Publication of JPS57149738A publication Critical patent/JPS57149738A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To flatten the film formed, and to ensure excellent wiring by etching one part of the film formed before and after removing a photo-resist film and facilitating a lift-off when the film of a metal or an insulator is shaped and worked through the lift-off. CONSTITUTION:A resist pattern 3 is shaped to a semiconductor 1, and an insulating film 2 is sputtered. The resist 3 is formed in inverted mesa structure, and a projection remains at an end edge after removing the resist 3. When the projection is etched and flattened, the breaking of wiring and a short circuit between layers are not generated. When the resist 3 and the insulating film 2 have approximately the same thickness, the surface of the inverted mesa-shaped resist 3 is coated with the insulating film 2, and the resist 3 is difficult to be removed. Accordingly, the resist is easily removed when one part (a boundary with the resist 3) of the insulating film is removed through etching. When the film 2 is etched again after removing the resist 3, the flat insulating film is obtained. According to this constitution, the excellent solid film is acquired through the lift-off even when a non-directional film forming means such as sputtering is used.
JP3509881A 1981-03-11 1981-03-11 Forming method for solid film Pending JPS57149738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3509881A JPS57149738A (en) 1981-03-11 1981-03-11 Forming method for solid film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3509881A JPS57149738A (en) 1981-03-11 1981-03-11 Forming method for solid film

Publications (1)

Publication Number Publication Date
JPS57149738A true JPS57149738A (en) 1982-09-16

Family

ID=12432458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3509881A Pending JPS57149738A (en) 1981-03-11 1981-03-11 Forming method for solid film

Country Status (1)

Country Link
JP (1) JPS57149738A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333581A (en) * 1976-09-10 1978-03-29 Hitachi Ltd Production of semiconductor device
JPS5570026A (en) * 1978-11-22 1980-05-27 Hitachi Ltd Formation of thin film pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333581A (en) * 1976-09-10 1978-03-29 Hitachi Ltd Production of semiconductor device
JPS5570026A (en) * 1978-11-22 1980-05-27 Hitachi Ltd Formation of thin film pattern

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