JPS5752130A - Forming method for electrode - Google Patents
Forming method for electrodeInfo
- Publication number
- JPS5752130A JPS5752130A JP12746780A JP12746780A JPS5752130A JP S5752130 A JPS5752130 A JP S5752130A JP 12746780 A JP12746780 A JP 12746780A JP 12746780 A JP12746780 A JP 12746780A JP S5752130 A JPS5752130 A JP S5752130A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode metal
- hole
- photoresist
- contacting hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To eliminate the occurrence of a disconnection trouble of an electrode metal at the edge of a contacting hole formed at an insulating film by burying in advance the electrode metal in the hole, and then forming a diffused electrode in contact with the electrode metal on the surface of an insulating substrate. CONSTITUTION:A photoresist pattern 12 is formed on an oxidized film 11 on a silicon substrate 10, and a contacting hole 13 is formed at the insulating film 11 by etching. Then, while the photoresist 12 remains, an aluminum film 14 is deposited, and when the photoresist 12 is then removed, only the electrode metal 14 is retained in the contacting hole by lift-off. Further, an aluminum film is deposited, is then patterned, and an electrode 15 connected to the substrate can be formed. Since the electrode 15 is accordingly formed on the electrode metal 15 filled in the contacting hole, it can eliminate the occurrence of a disconnection trouble of the electrode metal 14.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12746780A JPS5752130A (en) | 1980-09-12 | 1980-09-12 | Forming method for electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12746780A JPS5752130A (en) | 1980-09-12 | 1980-09-12 | Forming method for electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5752130A true JPS5752130A (en) | 1982-03-27 |
Family
ID=14960644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12746780A Pending JPS5752130A (en) | 1980-09-12 | 1980-09-12 | Forming method for electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752130A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59140020U (en) * | 1983-03-11 | 1984-09-19 | 三菱電機株式会社 | press mold |
JPH01162520A (en) * | 1987-11-19 | 1989-06-27 | Feintool Internatl Holding | Method and device for bending article |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140060A (en) * | 1974-04-26 | 1975-11-10 | ||
JPS51113478A (en) * | 1975-03-28 | 1976-10-06 | Fujitsu Ltd | The manufacturing method of semiconductor device |
-
1980
- 1980-09-12 JP JP12746780A patent/JPS5752130A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50140060A (en) * | 1974-04-26 | 1975-11-10 | ||
JPS51113478A (en) * | 1975-03-28 | 1976-10-06 | Fujitsu Ltd | The manufacturing method of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59140020U (en) * | 1983-03-11 | 1984-09-19 | 三菱電機株式会社 | press mold |
JPH0123612Y2 (en) * | 1983-03-11 | 1989-07-19 | ||
JPH01162520A (en) * | 1987-11-19 | 1989-06-27 | Feintool Internatl Holding | Method and device for bending article |
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