JPS57145379A - Manufacture of semiconductor device for generating optical electromotive force - Google Patents

Manufacture of semiconductor device for generating optical electromotive force

Info

Publication number
JPS57145379A
JPS57145379A JP57013840A JP1384082A JPS57145379A JP S57145379 A JPS57145379 A JP S57145379A JP 57013840 A JP57013840 A JP 57013840A JP 1384082 A JP1384082 A JP 1384082A JP S57145379 A JPS57145379 A JP S57145379A
Authority
JP
Japan
Prior art keywords
film
reaction furnace
type layer
silane
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57013840A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57013840A priority Critical patent/JPS57145379A/en
Publication of JPS57145379A publication Critical patent/JPS57145379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain the inexpensive device wherein transducing efficiency is low but a flat surface is not necessarily needed, by arranging a substrate in a pressure reduced reaction furnace, forming a P or N type non-single crystal semiconductor at first, then evacuate the inside of the reaction furnace, packing silane therein, growing an I type layer of 10Angstrom -1mum, and layering an N or P type layer again. CONSTITUTION:A metal film 2 such as tungsten is deposited on an insulated support 1 such as aluminum, the device is placed in the reaction furnace, and the pressure of its inside is reduced. Under this state, a thin semiconductor film of P or N type silicon or germanium having a specified size is grown on the metal film 2. The inside of the furnace is evacuated and the remaining growing raw material is purged. Thereafter silane is supplied. The I layer is provided on the film 5. An N or P type layer 6 is grown thereon by the same way for the growth of the film 5. Then a pectinated electrode 7 is formed. The entire surface including the electrode is coated by a reflection protecting film 4. A window is opened and a current outlet port 8 is provided. An outlet port 3 is also formed at the exposed end of the film 2.
JP57013840A 1982-01-29 1982-01-29 Manufacture of semiconductor device for generating optical electromotive force Pending JPS57145379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57013840A JPS57145379A (en) 1982-01-29 1982-01-29 Manufacture of semiconductor device for generating optical electromotive force

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57013840A JPS57145379A (en) 1982-01-29 1982-01-29 Manufacture of semiconductor device for generating optical electromotive force

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6077278A Division JPS5463690A (en) 1978-05-22 1978-05-22 Photovoltaic force generating semiconductor and method of producing same

Publications (1)

Publication Number Publication Date
JPS57145379A true JPS57145379A (en) 1982-09-08

Family

ID=11844468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57013840A Pending JPS57145379A (en) 1982-01-29 1982-01-29 Manufacture of semiconductor device for generating optical electromotive force

Country Status (1)

Country Link
JP (1) JPS57145379A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463690A (en) * 1978-05-22 1979-05-22 Yamazaki Shunpei Photovoltaic force generating semiconductor and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463690A (en) * 1978-05-22 1979-05-22 Yamazaki Shunpei Photovoltaic force generating semiconductor and method of producing same

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