JPS57145379A - Manufacture of semiconductor device for generating optical electromotive force - Google Patents
Manufacture of semiconductor device for generating optical electromotive forceInfo
- Publication number
- JPS57145379A JPS57145379A JP57013840A JP1384082A JPS57145379A JP S57145379 A JPS57145379 A JP S57145379A JP 57013840 A JP57013840 A JP 57013840A JP 1384082 A JP1384082 A JP 1384082A JP S57145379 A JPS57145379 A JP S57145379A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reaction furnace
- type layer
- silane
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain the inexpensive device wherein transducing efficiency is low but a flat surface is not necessarily needed, by arranging a substrate in a pressure reduced reaction furnace, forming a P or N type non-single crystal semiconductor at first, then evacuate the inside of the reaction furnace, packing silane therein, growing an I type layer of 10Angstrom -1mum, and layering an N or P type layer again. CONSTITUTION:A metal film 2 such as tungsten is deposited on an insulated support 1 such as aluminum, the device is placed in the reaction furnace, and the pressure of its inside is reduced. Under this state, a thin semiconductor film of P or N type silicon or germanium having a specified size is grown on the metal film 2. The inside of the furnace is evacuated and the remaining growing raw material is purged. Thereafter silane is supplied. The I layer is provided on the film 5. An N or P type layer 6 is grown thereon by the same way for the growth of the film 5. Then a pectinated electrode 7 is formed. The entire surface including the electrode is coated by a reflection protecting film 4. A window is opened and a current outlet port 8 is provided. An outlet port 3 is also formed at the exposed end of the film 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57013840A JPS57145379A (en) | 1982-01-29 | 1982-01-29 | Manufacture of semiconductor device for generating optical electromotive force |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57013840A JPS57145379A (en) | 1982-01-29 | 1982-01-29 | Manufacture of semiconductor device for generating optical electromotive force |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6077278A Division JPS5463690A (en) | 1978-05-22 | 1978-05-22 | Photovoltaic force generating semiconductor and method of producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57145379A true JPS57145379A (en) | 1982-09-08 |
Family
ID=11844468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57013840A Pending JPS57145379A (en) | 1982-01-29 | 1982-01-29 | Manufacture of semiconductor device for generating optical electromotive force |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57145379A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5463690A (en) * | 1978-05-22 | 1979-05-22 | Yamazaki Shunpei | Photovoltaic force generating semiconductor and method of producing same |
-
1982
- 1982-01-29 JP JP57013840A patent/JPS57145379A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5463690A (en) * | 1978-05-22 | 1979-05-22 | Yamazaki Shunpei | Photovoltaic force generating semiconductor and method of producing same |
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