JPS57134970A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS57134970A
JPS57134970A JP1989181A JP1989181A JPS57134970A JP S57134970 A JPS57134970 A JP S57134970A JP 1989181 A JP1989181 A JP 1989181A JP 1989181 A JP1989181 A JP 1989181A JP S57134970 A JPS57134970 A JP S57134970A
Authority
JP
Japan
Prior art keywords
film
electrode
gate
region
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1989181A
Other languages
English (en)
Other versions
JPH0348670B2 (ja
Inventor
Seigo Togashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP1989181A priority Critical patent/JPS57134970A/ja
Publication of JPS57134970A publication Critical patent/JPS57134970A/ja
Publication of JPH0348670B2 publication Critical patent/JPH0348670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
JP1989181A 1981-02-13 1981-02-13 Manufacture of thin film transistor Granted JPS57134970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989181A JPS57134970A (en) 1981-02-13 1981-02-13 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989181A JPS57134970A (en) 1981-02-13 1981-02-13 Manufacture of thin film transistor

Publications (2)

Publication Number Publication Date
JPS57134970A true JPS57134970A (en) 1982-08-20
JPH0348670B2 JPH0348670B2 (ja) 1991-07-25

Family

ID=12011812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989181A Granted JPS57134970A (en) 1981-02-13 1981-02-13 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS57134970A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100468A (ja) * 1983-11-07 1985-06-04 Hitachi Ltd プラズマ陽極酸化装置
JPH05243577A (ja) * 1992-02-26 1993-09-21 Seiko Epson Corp 薄膜トランジスタの製造方法
FR2752338A1 (fr) * 1996-06-28 1998-02-13 Lg Electronics Inc Transistor en couche mince a siliciure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100468A (ja) * 1983-11-07 1985-06-04 Hitachi Ltd プラズマ陽極酸化装置
JPH0530053B2 (ja) * 1983-11-07 1993-05-07 Hitachi Ltd
JPH05243577A (ja) * 1992-02-26 1993-09-21 Seiko Epson Corp 薄膜トランジスタの製造方法
FR2752338A1 (fr) * 1996-06-28 1998-02-13 Lg Electronics Inc Transistor en couche mince a siliciure

Also Published As

Publication number Publication date
JPH0348670B2 (ja) 1991-07-25

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