JPS57132352A - Complementary type metal oxide semiconductor integrated circuit device - Google Patents
Complementary type metal oxide semiconductor integrated circuit deviceInfo
- Publication number
- JPS57132352A JPS57132352A JP56018604A JP1860481A JPS57132352A JP S57132352 A JPS57132352 A JP S57132352A JP 56018604 A JP56018604 A JP 56018604A JP 1860481 A JP1860481 A JP 1860481A JP S57132352 A JPS57132352 A JP S57132352A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- region
- type
- integrated circuit
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain ohmic connection excellent for connection with each region by using a silicide consisting of an alloy of silicon and a metal as the wiring material of the complementary type MOS integrated ciurcit. CONSTITUTION:A P type well 2 is selectively diffused and formed to an N type silicon substrate 1, a field oxide film 3 and a gate insulating film 4 are shaped, and source and drain diffusion layers 5, 6, 7, 8 are molded. The polysilicon layers 9, 10, 11 of the first layers functioning as gate electrodes and wiring are formed, each region is coated with comparatively thin oxide films 12, and contact holes 13, 14, 15 are bored to the oxide films 12. The second layers 16 consisting of the alloy of polysilicon and the metal, such as platinum, molybdenum or the like are shaped onto the holes, and connected to the P<+> type region 6 as a drain, the N<+> type region 8 and the polysilicon layers through the contact holes 13, 14, 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56018604A JPS57132352A (en) | 1981-02-10 | 1981-02-10 | Complementary type metal oxide semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56018604A JPS57132352A (en) | 1981-02-10 | 1981-02-10 | Complementary type metal oxide semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57132352A true JPS57132352A (en) | 1982-08-16 |
Family
ID=11976239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56018604A Pending JPS57132352A (en) | 1981-02-10 | 1981-02-10 | Complementary type metal oxide semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132352A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210662A (en) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Semiconductor structural body |
| JPS62154777A (en) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | Semiconductor device |
| JPS63204628A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Semiconductor integrated circuit device |
| EP0324459A2 (en) * | 1988-01-14 | 1989-07-19 | Fujitsu Limited | Semiconductor integrated circuit having CMOS inverter |
-
1981
- 1981-02-10 JP JP56018604A patent/JPS57132352A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210662A (en) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | Semiconductor structural body |
| JPS62154777A (en) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | Semiconductor device |
| JPS63204628A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Semiconductor integrated circuit device |
| EP0324459A2 (en) * | 1988-01-14 | 1989-07-19 | Fujitsu Limited | Semiconductor integrated circuit having CMOS inverter |
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