JPS5558573A - Manufacture of mis semiconductor device - Google Patents

Manufacture of mis semiconductor device

Info

Publication number
JPS5558573A
JPS5558573A JP13054278A JP13054278A JPS5558573A JP S5558573 A JPS5558573 A JP S5558573A JP 13054278 A JP13054278 A JP 13054278A JP 13054278 A JP13054278 A JP 13054278A JP S5558573 A JPS5558573 A JP S5558573A
Authority
JP
Japan
Prior art keywords
gate electrode
layer
source
polycrystalline
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13054278A
Other languages
Japanese (ja)
Inventor
Yasunobu Osa
Tatsumi Shirasu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13054278A priority Critical patent/JPS5558573A/en
Priority to DE19792943150 priority patent/DE2943150A1/en
Publication of JPS5558573A publication Critical patent/JPS5558573A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the gate electrode resistance and connect the gate electrode directly to the source and the drain, by adding an impurity of the same conduction type as the source and the drain to No. 1-layer of the gate electrode of multi-layer structure, consisting of heat resisting metal, such as Mo, or its Si compound sandwiched by polycrystalline Si film.
CONSTITUTION: By the CVD method, polycrystalline Si 3 containing p is formed on p-type Si. By the sputtering method, Mo and polycrystalline Si are formed continuously. Thus, by preventing the oxidation of the Mo surface, a good ohmic contact is formed. After selective etching, by using a multi-layer mask consisting of films 3∼5, injecting ions, and operating heat treatment,n-type source 6 and drain 7 are formed. Film 5 is made conducting. At this time, n-layer 8 is produced, and the gate electrode and source 6 are directly connected. Next, by covering this with PSG 9 and opening a window, Al electrodes 10, 11 are provided. Mo, W, Cr or their Si compounds may be used, besides Mo. By this method, the gate electrode wiring resistance can be reduced and an MIS device directly connected to the diffusion layer of the surface of a base plate can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP13054278A 1978-10-25 1978-10-25 Manufacture of mis semiconductor device Pending JPS5558573A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13054278A JPS5558573A (en) 1978-10-25 1978-10-25 Manufacture of mis semiconductor device
DE19792943150 DE2943150A1 (en) 1978-10-25 1979-10-25 MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13054278A JPS5558573A (en) 1978-10-25 1978-10-25 Manufacture of mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS5558573A true JPS5558573A (en) 1980-05-01

Family

ID=15036767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13054278A Pending JPS5558573A (en) 1978-10-25 1978-10-25 Manufacture of mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS5558573A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041259A (en) * 1983-08-17 1985-03-04 Nec Corp Semiconductor device
JPS6057975A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115659A (en) * 1975-03-12 1976-10-12 Commissariat Energie Atomique Method of and device for electrically connecting componets one to the other
JPS5315771A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Production of mis semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115659A (en) * 1975-03-12 1976-10-12 Commissariat Energie Atomique Method of and device for electrically connecting componets one to the other
JPS5315771A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Production of mis semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041259A (en) * 1983-08-17 1985-03-04 Nec Corp Semiconductor device
JPS6057975A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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