JPS52114289A - Semiconductor light emittiing element - Google Patents

Semiconductor light emittiing element

Info

Publication number
JPS52114289A
JPS52114289A JP3105276A JP3105276A JPS52114289A JP S52114289 A JPS52114289 A JP S52114289A JP 3105276 A JP3105276 A JP 3105276A JP 3105276 A JP3105276 A JP 3105276A JP S52114289 A JPS52114289 A JP S52114289A
Authority
JP
Japan
Prior art keywords
semiconductor light
emittiing
type
layer
jucnction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3105276A
Other languages
Japanese (ja)
Other versions
JPS606113B2 (en
Inventor
Kenji Ikeda
Wataru Suzaki
Shigeki Horiuchi
Toshio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51031052A priority Critical patent/JPS606113B2/en
Publication of JPS52114289A publication Critical patent/JPS52114289A/en
Publication of JPS606113B2 publication Critical patent/JPS606113B2/en
Expired legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To increase efficiency and responsiveness and prolong service life by making the hole density of a P type layer larger than 2× 1018/cm3 and smaller than 6 × 1018/cm3 at ordinary temperature in an injection type semiconductor light emitting element formed with a PN jucnction with a P type Ga1-XxAlxAs layer and an N type Ga1-yAlyAs.
COPYRIGHT: (C)1977,JPO&Japio
JP51031052A 1976-03-22 1976-03-22 semiconductor light emitting device Expired JPS606113B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51031052A JPS606113B2 (en) 1976-03-22 1976-03-22 semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51031052A JPS606113B2 (en) 1976-03-22 1976-03-22 semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS52114289A true JPS52114289A (en) 1977-09-24
JPS606113B2 JPS606113B2 (en) 1985-02-15

Family

ID=12320700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51031052A Expired JPS606113B2 (en) 1976-03-22 1976-03-22 semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS606113B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466789A (en) * 1977-10-18 1979-05-29 Thomson Csf Diode for generating and detecting light of predetermined wavelength
JPS56135985A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd A xga1-xas light emitting diode
JPS57126254U (en) * 1981-02-02 1982-08-06
JPS57128806U (en) * 1981-02-07 1982-08-11
JPS57129368U (en) * 1981-02-07 1982-08-12
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916394A (en) * 1972-05-18 1974-02-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916394A (en) * 1972-05-18 1974-02-13

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466789A (en) * 1977-10-18 1979-05-29 Thomson Csf Diode for generating and detecting light of predetermined wavelength
JPS6244434B2 (en) * 1977-10-18 1987-09-21 Tomuson Sa
JPS56135985A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd A xga1-xas light emitting diode
JPS57126254U (en) * 1981-02-02 1982-08-06
JPS588253Y2 (en) * 1981-02-02 1983-02-15 三共電子工業株式会社 medical skin electrode
JPS57128806U (en) * 1981-02-07 1982-08-11
JPS57129368U (en) * 1981-02-07 1982-08-12
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element
JPS6124840B2 (en) * 1981-12-28 1986-06-12 Sharp Kk

Also Published As

Publication number Publication date
JPS606113B2 (en) 1985-02-15

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