JPS57122515A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57122515A
JPS57122515A JP881581A JP881581A JPS57122515A JP S57122515 A JPS57122515 A JP S57122515A JP 881581 A JP881581 A JP 881581A JP 881581 A JP881581 A JP 881581A JP S57122515 A JPS57122515 A JP S57122515A
Authority
JP
Japan
Prior art keywords
protective film
substrate
boron nitride
main faces
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP881581A
Other languages
Japanese (ja)
Inventor
Makoto Hirayama
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP881581A priority Critical patent/JPS57122515A/en
Publication of JPS57122515A publication Critical patent/JPS57122515A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Abstract

PURPOSE:To produce desired wafers by forming impurity diffusion regions for gettering in advance of formation of elements on semiconductor substrate. CONSTITUTION:A boron nitride film 3 is formed by gaseous phase chemical reaction, and a protective film 4 of silicon oxide or the like is successively formed on the boron nitride film 3 on the second side (reverse side) of a substrate 1 on which a protective film 2 has been coated on the first side of the main faces. A highly concentrated boron diffusion region 5 is then produced on the first side of the main faces of the substrate 1 by heat treatment of the substrate 1 at a temperature of maximum solid solubility. Next, the protective film 2 on the first side is removed with the protective film 4 on the second side remaining as it is. This process allows reduction in crystallographical defects caused in the process of the manufacture or generation and recombination centers of conduction charges resulting from contamination.
JP881581A 1981-01-22 1981-01-22 Manufacture of semiconductor device Pending JPS57122515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP881581A JPS57122515A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP881581A JPS57122515A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57122515A true JPS57122515A (en) 1982-07-30

Family

ID=11703307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP881581A Pending JPS57122515A (en) 1981-01-22 1981-01-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57122515A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142350A (en) * 1990-07-16 1992-08-25 General Motors Corporation Transistor having cubic boron nitride layer
US5227318A (en) * 1989-12-06 1993-07-13 General Motors Corporation Method of making a cubic boron nitride bipolar transistor
US5232862A (en) * 1990-07-16 1993-08-03 General Motors Corporation Method of fabricating a transistor having a cubic boron nitride layer
US5279869A (en) * 1989-12-06 1994-01-18 General Motors Corporation Laser deposition of cubic boron nitride films
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227318A (en) * 1989-12-06 1993-07-13 General Motors Corporation Method of making a cubic boron nitride bipolar transistor
US5279869A (en) * 1989-12-06 1994-01-18 General Motors Corporation Laser deposition of cubic boron nitride films
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films
US5142350A (en) * 1990-07-16 1992-08-25 General Motors Corporation Transistor having cubic boron nitride layer
US5232862A (en) * 1990-07-16 1993-08-03 General Motors Corporation Method of fabricating a transistor having a cubic boron nitride layer

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