JPS5546503A - Method of making semiconductor device - Google Patents

Method of making semiconductor device

Info

Publication number
JPS5546503A
JPS5546503A JP11858678A JP11858678A JPS5546503A JP S5546503 A JPS5546503 A JP S5546503A JP 11858678 A JP11858678 A JP 11858678A JP 11858678 A JP11858678 A JP 11858678A JP S5546503 A JPS5546503 A JP S5546503A
Authority
JP
Japan
Prior art keywords
region
ions
substrate
implanted
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11858678A
Other languages
Japanese (ja)
Inventor
Takashi Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11858678A priority Critical patent/JPS5546503A/en
Publication of JPS5546503A publication Critical patent/JPS5546503A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To facilitate integration or the like when ions are implanted into an ion implantation region of a semiconductor substrate, by irradiating pulse laser light upon the implantation region through a thin film provided thereon and by heating the region to the same depth as the implantation of the ions.
CONSTITUTION: A silicon oxide film 32 of a prescribed thickness is produced on a silicon substrate 31. A hole is opened through the part of the film 32 corresponding to the impurity implantation region of the substrate 31. Arsenic ions are then implanted by a conventional method so that an ion implantation region 34 is produced. A silicon oxide film 35 of a prescribed thickness is coated on the total surface of the film 32 and the region 34. Pulse laser light 36 is projected to the region 34 so that the substrate 31 is annealed to the depth of the region 34. As a result, disadvantages such as the deep diffusion of impurities and the bulk transfer of strong heat are eliminated and the ions are implanted to the depth of the region 34. Integration is thus facilitated.
COPYRIGHT: (C)1980,JPO&Japio
JP11858678A 1978-09-28 1978-09-28 Method of making semiconductor device Pending JPS5546503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11858678A JPS5546503A (en) 1978-09-28 1978-09-28 Method of making semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11858678A JPS5546503A (en) 1978-09-28 1978-09-28 Method of making semiconductor device

Publications (1)

Publication Number Publication Date
JPS5546503A true JPS5546503A (en) 1980-04-01

Family

ID=14740245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11858678A Pending JPS5546503A (en) 1978-09-28 1978-09-28 Method of making semiconductor device

Country Status (1)

Country Link
JP (1) JPS5546503A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650511A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS56157023A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Manufacture of semiconductor device
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
JP2004335815A (en) * 2003-05-09 2004-11-25 Mitsubishi Electric Corp Manufacturing method of silicon carbide schottky barrier diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650511A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS634346B2 (en) * 1979-10-01 1988-01-28 Hitachi Ltd
JPS56157023A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Manufacture of semiconductor device
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
JP2004335815A (en) * 2003-05-09 2004-11-25 Mitsubishi Electric Corp Manufacturing method of silicon carbide schottky barrier diode
JP4506100B2 (en) * 2003-05-09 2010-07-21 三菱電機株式会社 Method for manufacturing silicon carbide Schottky barrier diode

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