JPS57106181A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS57106181A JPS57106181A JP18215180A JP18215180A JPS57106181A JP S57106181 A JPS57106181 A JP S57106181A JP 18215180 A JP18215180 A JP 18215180A JP 18215180 A JP18215180 A JP 18215180A JP S57106181 A JPS57106181 A JP S57106181A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- sections
- dimensional integrated
- shaped
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To form a polyfunctional integrated circuit element having extra high density by a method wherein a two-dimensional integrated circuit layer containing an active element is shaped, the integrated circuit layers are laminated in a multilayer through insulating layers to form a three-dimensional integrated circuit, and each integrated circuit is connected by optical signals. CONSTITUTION:The active elements such as inverter circuits consisting of MOS transistors (TR) T1 and T2 are formed onto a substrate through the manufacture of a conventional two-dimensional integrated circuit, and sections among the first layer insulating isolation film 20 is shaped onto the substrate, and sections among layers are isolated. A plural kind of semiconductor thin-films are formed. An Si crystalline film 21 shaping a TR T3 and a GaAlAs film 24 molding a light emitting diode D1 are formed, and used as the first laminated element. The process is repeated successively, and a multilayer element region is shaped.A light receiving diode D2 is molded to an N layer, and the sections among each circuit are coupled by the optical signals. Accordingly, the polyfunctional three-dimensional integrated circuit element having extra-high density is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18215180A JPS57106181A (en) | 1980-12-24 | 1980-12-24 | Integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18215180A JPS57106181A (en) | 1980-12-24 | 1980-12-24 | Integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106181A true JPS57106181A (en) | 1982-07-01 |
Family
ID=16113244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18215180A Pending JPS57106181A (en) | 1980-12-24 | 1980-12-24 | Integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106181A (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832453A (en) * | 1981-08-21 | 1983-02-25 | Hitachi Ltd | Electronic circuit member using light |
JPS5950583A (en) * | 1982-09-16 | 1984-03-23 | Fujitsu Ltd | Semiconductor device |
JPS60218867A (en) * | 1984-04-13 | 1985-11-01 | Fuji Electric Corp Res & Dev Ltd | Compound element |
JPS613450A (en) * | 1984-06-18 | 1986-01-09 | Hiroshima Daigaku | Shared memory integrated device of three-dimensional photo coupling |
JPS61160959A (en) * | 1985-01-10 | 1986-07-21 | Hitachi Ltd | Semiconductor device of multilayer structure |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5258320A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Single crystal silicon arrayed devices for display panels |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5280184A (en) * | 1992-04-08 | 1994-01-18 | Georgia Tech Research Corporation | Three dimensional integrated circuits with lift-off |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
US5362671A (en) * | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
US5610094A (en) * | 1986-07-11 | 1997-03-11 | Canon Kabushiki Kaisha | Photoelectric conversion device |
JP2651509B2 (en) * | 1990-06-29 | 1997-09-10 | フォトニック インテグレイション リサーチ,インコーポレイテッド | Optoelectronic device having optical waveguide on metallized substrate and method of forming the optical waveguide |
US5757445A (en) * | 1990-12-31 | 1998-05-26 | Kopin Corporation | Single crystal silicon tiles for display panels |
US6143582A (en) * | 1990-12-31 | 2000-11-07 | Kopin Corporation | High density electronic circuit modules |
US6593978B2 (en) | 1990-12-31 | 2003-07-15 | Kopin Corporation | Method for manufacturing active matrix liquid crystal displays |
US6627953B1 (en) | 1990-12-31 | 2003-09-30 | Kopin Corporation | High density electronic circuit modules |
JP2008182209A (en) * | 2006-12-27 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic apparatus using it |
-
1980
- 1980-12-24 JP JP18215180A patent/JPS57106181A/en active Pending
Non-Patent Citations (1)
Title |
---|
ELECTRONICS=1963 * |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832453A (en) * | 1981-08-21 | 1983-02-25 | Hitachi Ltd | Electronic circuit member using light |
JPS5950583A (en) * | 1982-09-16 | 1984-03-23 | Fujitsu Ltd | Semiconductor device |
JPS60218867A (en) * | 1984-04-13 | 1985-11-01 | Fuji Electric Corp Res & Dev Ltd | Compound element |
JPS613450A (en) * | 1984-06-18 | 1986-01-09 | Hiroshima Daigaku | Shared memory integrated device of three-dimensional photo coupling |
JPH0568105B2 (en) * | 1984-06-18 | 1993-09-28 | Univ Hiroshima | |
JPS61160959A (en) * | 1985-01-10 | 1986-07-21 | Hitachi Ltd | Semiconductor device of multilayer structure |
US5610094A (en) * | 1986-07-11 | 1997-03-11 | Canon Kabushiki Kaisha | Photoelectric conversion device |
JP2651509B2 (en) * | 1990-06-29 | 1997-09-10 | フォトニック インテグレイション リサーチ,インコーポレイテッド | Optoelectronic device having optical waveguide on metallized substrate and method of forming the optical waveguide |
US6232136B1 (en) | 1990-12-31 | 2001-05-15 | Kopin Corporation | Method of transferring semiconductors |
US6486929B1 (en) | 1990-12-31 | 2002-11-26 | Kopin Corporation | Bonded layer semiconductor device |
US6919935B2 (en) | 1990-12-31 | 2005-07-19 | Kopin Corporation | Method of forming an active matrix display |
US6627953B1 (en) | 1990-12-31 | 2003-09-30 | Kopin Corporation | High density electronic circuit modules |
US5362671A (en) * | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
US5377031A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | Single crystal silicon tiles for liquid crystal display panels including light shielding layers |
US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
US6593978B2 (en) | 1990-12-31 | 2003-07-15 | Kopin Corporation | Method for manufacturing active matrix liquid crystal displays |
US6521940B1 (en) | 1990-12-31 | 2003-02-18 | Kopin Corporation | High density electronic circuit modules |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5539550A (en) * | 1990-12-31 | 1996-07-23 | Kopin Corporation | Liquid crystal display having adhered circuit tiles |
US5258320A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Single crystal silicon arrayed devices for display panels |
US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5702963A (en) * | 1990-12-31 | 1997-12-30 | Kopin Corporation | Method of forming high density electronic circuit modules |
US5757445A (en) * | 1990-12-31 | 1998-05-26 | Kopin Corporation | Single crystal silicon tiles for display panels |
US6143582A (en) * | 1990-12-31 | 2000-11-07 | Kopin Corporation | High density electronic circuit modules |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US6414783B2 (en) | 1990-12-31 | 2002-07-02 | Kopin Corporation | Method of transferring semiconductors |
US6424020B1 (en) | 1990-12-31 | 2002-07-23 | Kopin Corporation | High Density electronic circuit modules |
US5453405A (en) * | 1991-01-18 | 1995-09-26 | Kopin Corporation | Method of making light emitting diode bars and arrays |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5280184A (en) * | 1992-04-08 | 1994-01-18 | Georgia Tech Research Corporation | Three dimensional integrated circuits with lift-off |
JP2008182209A (en) * | 2006-12-27 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic apparatus using it |
JP2014187395A (en) * | 2006-12-27 | 2014-10-02 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic apparatus |
JP2016085222A (en) * | 2006-12-27 | 2016-05-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57106181A (en) | Integrated circuit | |
EP0317124B1 (en) | Silicon on insulator semiconductor components containing thin synthetic diamond films | |
JPS56140646A (en) | Method of manufacturing semiconductor circuit on semiconductor silicon substrate | |
EP0183624A3 (en) | L-fast fabrication process for high speed bipolar analog large scale integrated circuits | |
US3357871A (en) | Method for fabricating integrated circuits | |
JPS6473669A (en) | Semiconductor integrated circuit | |
JPS5350686A (en) | Production of semiconductor integrated circuit | |
JPS56161696A (en) | Board | |
JPS5378789A (en) | Manufacture of semiconductor integrated circuit | |
JPS5575265A (en) | Complementary type field-effect metal-insulator- semiconductor device | |
JPS5721849A (en) | Semiconductor integrated circuit | |
JPS5645070A (en) | Semiconductor integrated circuit device | |
JPS5345987A (en) | Semiconductor integrated circuit element | |
JPS5246783A (en) | Process for production of semiconductor integrated circuit | |
JPS5790975A (en) | Composite type power transistor | |
JPS5636153A (en) | Semiconductor integrated circuit | |
JPS5789239A (en) | Semiconductor integrated circuit | |
JPS57113272A (en) | I2l integrated circuit device | |
JPS5754361A (en) | Cmos logic circuit device | |
JPS56110260A (en) | Semiconductor device | |
JPS5660049A (en) | Manufacture of semiconductor integrated circuit device | |
JPS5636148A (en) | Semiconductor device and its manufacture | |
JPS5793567A (en) | Integrated photodetecting circuit device | |
JPS51135475A (en) | Manufacturing process of a semiconductor integrated circuit | |
SE9102984D0 (en) | SEMICONDUCTOR COMPONENT |