JPS5575265A - Complementary type field-effect metal-insulator- semiconductor device - Google Patents

Complementary type field-effect metal-insulator- semiconductor device

Info

Publication number
JPS5575265A
JPS5575265A JP14921678A JP14921678A JPS5575265A JP S5575265 A JPS5575265 A JP S5575265A JP 14921678 A JP14921678 A JP 14921678A JP 14921678 A JP14921678 A JP 14921678A JP S5575265 A JPS5575265 A JP S5575265A
Authority
JP
Japan
Prior art keywords
layer
channel
transistors
field
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14921678A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14921678A priority Critical patent/JPS5575265A/en
Publication of JPS5575265A publication Critical patent/JPS5575265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To raise a latch-up dielectric strength, by separating a p-channel and an n-channel field-effect transistors from each other by an insulating layer and coating the bottoms of the transistors with an n<+>-layer and a p<+>-layer. CONSTITUTION:A p<+>-well is provided in an n<+>-silicon substrate 1'. When no- additive silicon is epitaxially grown, an n<->-layer 4 and a p<->-layer 5 are produced by self-diffusion. A nitride film is used as a mask to produce an oxide layer 3 which extends to the substrate 1'. A p-channel and an n-channel field-effect transistor are produced in the exposed layers 4, 5 by a conventional method. As a result, a p- channel and an n-channel metal-insulator-semiconductor field-effect transistors are separated from each other by the layer 3 and the bottoms of the transistors are coated with an n<+>-layer are a p<+>-layer respectively. A latch-up dielectric strength of a pnpn-construction is thus raised. Although the p<+>-well 2' has a large depth and a high concentration, it does not constitute the substrate part of a field-effect transistor manufacturing region. Therefore, the p<+>-well 2' does not hinder dense integration and speeding-up.
JP14921678A 1978-12-01 1978-12-01 Complementary type field-effect metal-insulator- semiconductor device Pending JPS5575265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14921678A JPS5575265A (en) 1978-12-01 1978-12-01 Complementary type field-effect metal-insulator- semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14921678A JPS5575265A (en) 1978-12-01 1978-12-01 Complementary type field-effect metal-insulator- semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575265A true JPS5575265A (en) 1980-06-06

Family

ID=15470378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14921678A Pending JPS5575265A (en) 1978-12-01 1978-12-01 Complementary type field-effect metal-insulator- semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575265A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPS59181048A (en) * 1983-03-31 1984-10-15 Toshiba Corp Complementary semiconductor device
JPS6159769A (en) * 1984-08-30 1986-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPS61501736A (en) * 1984-03-29 1986-08-14 ヒユ−ズ・エアクラフト・カンパニ− Latch-up resistant CMOS structure for VLSI
JPH0525766U (en) * 1991-09-11 1993-04-02 株式会社三協精機製作所 Printed wiring board

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863682A (en) * 1971-12-06 1973-09-04
JPS52151574A (en) * 1976-06-11 1977-12-16 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863682A (en) * 1971-12-06 1973-09-04
JPS52151574A (en) * 1976-06-11 1977-12-16 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPH0410227B2 (en) * 1982-05-07 1992-02-24
JPS59181048A (en) * 1983-03-31 1984-10-15 Toshiba Corp Complementary semiconductor device
JPH0519822B2 (en) * 1983-03-31 1993-03-17 Tokyo Shibaura Electric Co
JPS61501736A (en) * 1984-03-29 1986-08-14 ヒユ−ズ・エアクラフト・カンパニ− Latch-up resistant CMOS structure for VLSI
JPS6159769A (en) * 1984-08-30 1986-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPH0525766U (en) * 1991-09-11 1993-04-02 株式会社三協精機製作所 Printed wiring board

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