JPS5710271A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS5710271A JPS5710271A JP8495680A JP8495680A JPS5710271A JP S5710271 A JPS5710271 A JP S5710271A JP 8495680 A JP8495680 A JP 8495680A JP 8495680 A JP8495680 A JP 8495680A JP S5710271 A JPS5710271 A JP S5710271A
- Authority
- JP
- Japan
- Prior art keywords
- resistors
- pressure converter
- layers
- divided
- gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain easily a pressure converter having favolable zero characteristic by a method wherein a gauge resistor part of the semiconductor pressure converter is divided and those are connected through diffusion layers of high impurity concentration, and unequality of the resistance values between the inside and outside gauge resistors is regulated in accordance with the condition of diffusion. CONSTITUTION:A diaphragm part 2 is provided on an N type Si substrate 1, and inside gauge resistors R2, R3 and outside gauge resistors R11, R41 to place the formers between them are formed by ion implantation of P type impurities, etc. In this constitution, the resistors R2 and R3 are formed in one region, but the resistors R11 and R41 are formed being divided into two alike, and the divided parts between the resistors R11 and between the resistors R41 are connected respectively with the P<+> type layers 3, 4. At this time, impurity concentration and diffusing time of the layers 3, 4 are controlled to regulate unequality of resistance between the inside and outside gauges. After then the layers 4 and bonding pad parts 5 are connected with Al wirings 6 to constitute the pressure converter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8495680A JPS5710271A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8495680A JPS5710271A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710271A true JPS5710271A (en) | 1982-01-19 |
Family
ID=13845077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8495680A Pending JPS5710271A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710271A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
| JPH0425256U (en) * | 1990-06-25 | 1992-02-28 | ||
| JP2015184222A (en) * | 2014-03-25 | 2015-10-22 | セイコーエプソン株式会社 | Physical quantity sensor, altimeter, electronic apparatus, and moving body |
-
1980
- 1980-06-23 JP JP8495680A patent/JPS5710271A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
| JPH0337750B2 (en) * | 1984-05-29 | 1991-06-06 | Toyoda Chuo Kenkyusho Kk | |
| JPH0425256U (en) * | 1990-06-25 | 1992-02-28 | ||
| JP2015184222A (en) * | 2014-03-25 | 2015-10-22 | セイコーエプソン株式会社 | Physical quantity sensor, altimeter, electronic apparatus, and moving body |
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