JPS56133877A - Semiconductor diaphragm type sensor - Google Patents
Semiconductor diaphragm type sensorInfo
- Publication number
- JPS56133877A JPS56133877A JP3775480A JP3775480A JPS56133877A JP S56133877 A JPS56133877 A JP S56133877A JP 3775480 A JP3775480 A JP 3775480A JP 3775480 A JP3775480 A JP 3775480A JP S56133877 A JPS56133877 A JP S56133877A
- Authority
- JP
- Japan
- Prior art keywords
- thick
- strain producing
- single crystal
- rigid body
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To improve the sensitivity of a semiconductor diaphragm type sensor by a method wherein a thick fixed portion is formed on the periphery of a semiconductor single crystal as a diaphragm material, a thick rigid body portion is formed in the center, and the thin portion therebetween is used as a strain producing portion. CONSTITUTION:A diaphragm 11 made of a semiconductor single crystal of N type silicon consists of a substrate having, e.g.,{100} plane, where a groove-shaped hollow portion 33 is formed by an anisotropic process using alkali etching except for the peripheral thick portion to be a fixed portion 31 and the central thick portion to be a central rigid body 32. The thin portion constituted thereby is used as a strain producing portion 41, on whose upper surface piezoelectric resistance elements 5 are formed by diffusion of P type impurity. The boundary lines between the fixed portion 31 and the strain producing portion 41, and the rigid body portion 32 and the strain producing portion 41 are made to be straight lines perpendicular to the crystal axes <110> of the semiconductor single crystal respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3775480A JPS56133877A (en) | 1980-03-24 | 1980-03-24 | Semiconductor diaphragm type sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3775480A JPS56133877A (en) | 1980-03-24 | 1980-03-24 | Semiconductor diaphragm type sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56133877A true JPS56133877A (en) | 1981-10-20 |
Family
ID=12506251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3775480A Pending JPS56133877A (en) | 1980-03-24 | 1980-03-24 | Semiconductor diaphragm type sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133877A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154179A (en) * | 1984-12-27 | 1986-07-12 | Nec Corp | Pressure sensor |
| JPS61154180A (en) * | 1984-12-27 | 1986-07-12 | Nec Corp | Pressure sensor |
| JPS62158367A (en) * | 1985-12-28 | 1987-07-14 | Anritsu Corp | Pressure sensor |
| US5233213A (en) * | 1990-07-14 | 1993-08-03 | Robert Bosch Gmbh | Silicon-mass angular acceleration sensor |
| JP2009300197A (en) * | 2008-06-12 | 2009-12-24 | Alps Electric Co Ltd | Semiconductor pressure sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169678A (en) * | 1974-11-06 | 1976-06-16 | Philips Nv |
-
1980
- 1980-03-24 JP JP3775480A patent/JPS56133877A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169678A (en) * | 1974-11-06 | 1976-06-16 | Philips Nv |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154179A (en) * | 1984-12-27 | 1986-07-12 | Nec Corp | Pressure sensor |
| JPS61154180A (en) * | 1984-12-27 | 1986-07-12 | Nec Corp | Pressure sensor |
| JPS62158367A (en) * | 1985-12-28 | 1987-07-14 | Anritsu Corp | Pressure sensor |
| JPH0564866B2 (en) * | 1985-12-28 | 1993-09-16 | Anritsu Corp | |
| US5233213A (en) * | 1990-07-14 | 1993-08-03 | Robert Bosch Gmbh | Silicon-mass angular acceleration sensor |
| JP2009300197A (en) * | 2008-06-12 | 2009-12-24 | Alps Electric Co Ltd | Semiconductor pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4016644A (en) | Methods of fabricating low pressure silicon transducers | |
| JPS56133877A (en) | Semiconductor diaphragm type sensor | |
| JPS56164582A (en) | Semiconductor piezo-electric element and manufacture thereof | |
| JPS5524408A (en) | Pressure-electric signal translation device | |
| JPS562671A (en) | Manufacture of semiconductor diaphragm | |
| EP0372583A3 (en) | Method of forming thin film elements of an ultrasonic array transducer | |
| JPS5734373A (en) | Silicon diaphragm | |
| JPS644082A (en) | Manufacture of oscillatory type transducer | |
| JPS5522838A (en) | Manufacturing method of semiconductor strain gauge type pressure senser chip | |
| JPS63155774A (en) | Semiconductor pressure sensor | |
| GB1417801A (en) | Integrated single crystal pressure transducer | |
| JPS5680174A (en) | Semiconductor pressure transducer | |
| JPS5544717A (en) | Manufacturing semiconductor strain-gage type pressure sensor | |
| JPS5617076A (en) | Manufacture of semiconductor device | |
| JPS56140669A (en) | Semiconductor pressure sensor | |
| JPS649664A (en) | Semiconductor pressure sensor | |
| JPS6459809A (en) | Formation of low-stress thin film and its manufacture | |
| JPS5779680A (en) | Manufacture of silicon avalanche photodiode | |
| JPS57128087A (en) | Magneto-electric transducer element | |
| JPS5737235A (en) | Semiconductor pressure-sensitive device | |
| KR880001440B1 (en) | Separation diffusion process | |
| JPS57170576A (en) | Manufacture of semiconductor photodetector | |
| JPS54148474A (en) | Manufacture of semiconductor device | |
| JPH01170054A (en) | Manufacture of semiconductor pressure sensor | |
| JPS5789979A (en) | Thermal head |