JPS5698841A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5698841A
JPS5698841A JP41380A JP41380A JPS5698841A JP S5698841 A JPS5698841 A JP S5698841A JP 41380 A JP41380 A JP 41380A JP 41380 A JP41380 A JP 41380A JP S5698841 A JPS5698841 A JP S5698841A
Authority
JP
Japan
Prior art keywords
layer
anodization
mask
film
etches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41380A
Other languages
Japanese (ja)
Inventor
Kimiaki Katsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP41380A priority Critical patent/JPS5698841A/en
Publication of JPS5698841A publication Critical patent/JPS5698841A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent wire breaking on the Al layer, by forming selectively anodization film on the Al layer on the semiconductor wafer and by making the cross- section of the end part of the Al layer tapered when the films of that part are removed. CONSTITUTION:With resist mask on the Al layer 2 on the GaAs substrate 1, anodization is performed in the oxalic or sulphuric acid solution. The growth speed of the Al oxide film 5 thus anodized is so fast that its volume becomes greater than Al. Therefore the end part 4 of the mask 3 turns up forming Al pattern with cross-section of a very mild inclination. The Al anodization film 5 thus formed is removed in a solution which etches it faster than it etches Al2, and the mask 3 is taken off. No wire breaking take place when Ti-Pt-Au electrodes are stacked on the Al layer 3 with mildly tapered inclination thus obtained. Moreover, better coverage can be obtained when insulation film is formed.
JP41380A 1980-01-07 1980-01-07 Preparation of semiconductor device Pending JPS5698841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP41380A JPS5698841A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP41380A JPS5698841A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5698841A true JPS5698841A (en) 1981-08-08

Family

ID=11473102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41380A Pending JPS5698841A (en) 1980-01-07 1980-01-07 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5698841A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070786A (en) * 2015-07-28 2015-11-18 昆明物理研究所 High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070786A (en) * 2015-07-28 2015-11-18 昆明物理研究所 High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode

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