CN105070786A - High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode - Google Patents
High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode Download PDFInfo
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- CN105070786A CN105070786A CN201510449310.6A CN201510449310A CN105070786A CN 105070786 A CN105070786 A CN 105070786A CN 201510449310 A CN201510449310 A CN 201510449310A CN 105070786 A CN105070786 A CN 105070786A
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- 230000003647 oxidation Effects 0.000 title claims abstract description 21
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000000605 extraction Methods 0.000 claims description 53
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000002604 ultrasonography Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 3
- 229910052774 Proactinium Inorganic materials 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000005057 refrigeration Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000005616 pyroelectricity Effects 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a lead-out electrode of a reading circuit of a pyroelectric mixed non-refrigeration focal plane detector and a preparation method of the electrode, especially to a high temperature oxidation resistant lead-out electrode, and the Al lead-out electrode of the reading circuit is prevented from thermal diffusion and oxidation in high-temperature technology. The lead-out electrode of the reading circuit is of a composite structure. A Ti or Cr metal layer, a Pa or Pt metal layer and an Au or Ti metal layer are successively prepared on the reading circuit processed by a silicon factory, and the lead-out electrode is a composite electrode of a four-layer structure. Ohmic contact with the Al electrode is realized, the composite lead-out electrode of the four-layer structure has high resistance to high temperature oxidation in the subsequent boss preparation process, the technical compatibility is higher, it is ensured that signals of the detector can be effectively read out, and the yield rate of detector assemblies is effectively improved.
Description
Technical field
The present invention relates to reading circuit extraction electrode of the hybrid uncooled fpa detector of pyroelectricity and preparation method thereof, specifically refer to and a kind of extraction electrode can with resistance to high temperature oxidation characteristic is provided, stop the thermal diffusion in high-temperature technology of the Al extraction electrode of reading circuit and oxidation.
Background technology
The hybrid uncooled fpa detector of pyroelectricity on chip, reading circuit, prepares indium post respectively, then integrated by the mode of flip-chip interconnection.Therefore, after reading circuit completes from silicon factory process, also need the indium post for the preparation of flip-chip interconnection.Hybrid uncooled fpa detector is reduce thermal conductance often to adopt the organic material of a low thermal conductance to do boss replacement part indium post, prepares indium post from extraction electrode climbing to boss top.The preparation of organic boss need be solidified under the high temperature of 400 DEG C, forms stable boss structure, ensures the reliability of detector.
The extraction electrode of conventional read circuit is Al layer, is the common process of extensive silicon circuit processing factory.The easy thermal oxidation in the high temperature preparation process of boss of Al electrode forms aluminium oxide, aluminium oxide poorly conductive, causes extraction electrode to be electrically connected and loses efficacy, produce blind element.For realizing effective connection of reading circuit extraction electrode, it is significant that oxidation resistant extraction electrode prepared by reading circuit.
Summary of the invention
For solving effective connectivity problem of the reading circuit extraction electrode of the hybrid uncooled fpa detector of pyroelectricity, the invention provides a kind of reading circuit extraction electrode of new resistance to high temperature oxidation, solve reading circuit extraction electrode under the high temperature of 400 DEG C, be not thermally oxidized, make reading circuit extraction electrode have good conduction, ensure that reading circuit is electrically connected with the effective of chip.
The technical solution used in the present invention is as follows:
A preparation method for the reading circuit extraction electrode of resistance to high temperature oxidation, comprises the steps:
Step a, reading circuit cleans: after reading circuit completes from the flow of silicon factory, extraction electrode is Al metal level, take reading circuit as substrate, utilize each ultrasonic cleaning of toluene, acetone and ethanol three times successively, clean to reading circuit surperficial without fifth wheel, then dry up residual liquid by nitrogen gun;
Step b, photoetching, corroding electrode hole: on step a gained reading circuit, with the rotating speed of 2500 ~ 3500 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2 ~ 3 μm, then toasts 2 ~ 3 minutes at 80 DEG C; Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control while developing time makes the photoresist developing of electrode hole clean, Al metal level is corroded 500-800;
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, the reading circuit of completing steps b sputters Ti metal level or the Cr metal level of 500-600 successively, the Au metal level of the Pa metal level of 2000-2100 or Pt metal level, 500-600 or Ti metal level;
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak more than 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 60W ~ 80W is all peeled off to the photoresist covered on reading circuit and cleaned up, peeling off the extraction electrode on reading circuit 1 formed as shown in Figure 5 is four-layer structure compound extraction electrode.
Further, the preparation method of the reading circuit extraction electrode of preferably described resistance to high temperature oxidation, comprises the steps:
Step a, reading circuit cleans: after reading circuit completes from the flow of silicon factory, extraction electrode is Al metal level, take reading circuit as substrate, utilize each ultrasonic cleaning of toluene, acetone and ethanol three times successively, clean to reading circuit surperficial without fifth wheel, then dry up residual liquid by nitrogen gun;
Step b, photoetching, corroding electrode hole: on step a gained reading circuit, with the rotating speed of 2800 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2.5 μm, then front baking 2.5 minutes at 80 DEG C; Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control while developing time makes the photoresist developing of electrode hole clean, Al metal level is corroded 500-800;
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, the reading circuit of completing steps b sputters the Cr metal level of 550 successively, the Pt metal level of 2070, the Au metal level of 580;
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak more than 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 70W is all peeled off to the photoresist covered on reading circuit and cleaned up, peel off and form four-layer structure compound reading circuit extraction electrode.
compared with prior art, its beneficial effect is in the present invention:
The present invention is on the Al extraction electrode of reading circuit, prepare the four-layer structure compound extraction electrode of resistance to high temperature oxidation, existing individual layer Al extraction electrode of comparing experiences before and after the high-temperature technology of 400 DEG C, square resistance becomes 1k Ω/ ~ 2k Ω/ from 20 Ω/ ~ 30 Ω/, thus cause electrical connection to be lost efficacy, have great importance.
The present invention not only achieves the ohmic contact with Al electrode, and simultaneously in follow-up boss preparation process, four layers of compound extraction electrode have resistance to high temperature oxidation characteristic, and before and after the high-temperature technology of experience 400 DEG C, square resistance is 20 Ω/ ~ 30 Ω/.
This four-layer structure compound extraction electrode technology of preparing has stronger processing compatibility, ensure that the signal of detector effectively reads, makes the rate of finished products of detector assembly effectively bring up to more than 90% from 50%.
Accompanying drawing explanation
Fig. 1 is the process chart of reading circuit extraction electrode of the present invention;
Fig. 2 is the schematic diagram of the reading circuit extraction electrode after completing from the flow of silicon factory;
Fig. 3 is the schematic diagram coating photoresist on reading circuit;
Fig. 4 is the schematic diagram of the reading circuit extraction electrode through photoetching and corroding electrode hole;
Fig. 5 is the schematic diagram of the reading circuit extraction electrode after combination electrode sputtering;
Fig. 6 is the schematic diagram of reading circuit extraction electrode of the present invention;
1 is reading circuit, and 2 is Al metal level, and 3 is Ti metal level or Cr metal level, and 4 is Pa metal level or Pt metal level, and 5 is Au metal level or Ti metal level, and 6 is photoresist layer.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.
It will be understood to those of skill in the art that the following example only for illustration of the present invention, and should not be considered as limiting scope of the present invention.Unreceipted concrete technology or condition person in embodiment, according to the technology described by the document in this area or condition or carry out according to product description.Agents useful for same or the unreceipted production firm person of instrument, being can by buying the conventional products obtained.
Embodiment 1
As shown in Figure 1, a kind of preparation method of reading circuit extraction electrode of resistance to high temperature oxidation, comprises the steps:
Step a, reading circuit cleans: as shown in Figure 2, after reading circuit 1 completes from the flow of silicon factory, extraction electrode is Al metal level 2.With reading circuit 1 for substrate, first clean: utilize toluene, acetone, ethanol respectively to clean three times successively, dry up residual solution by nitrogen gun.
Step b, photoetching, corroding electrode hole: on reading circuit 1, with the rotating speed of 3500 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2 μm, 30 seconds gluing time, then front baking 2 minutes at 80 DEG C, forms photoresist layer 6, as shown in Figure 3.Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control developing time, while making the photoresist developing of electrode hole clean, Al metal level 2 is corroded 500-800, exposes fresh Al metal level, as shown in Figure 4.
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, the reading circuit of completing steps b sputters the Au metal level 5 of the Pa metal level 4,500 of the Ti metal level 3,2000 of 500 successively, as shown in Figure 5.
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 60W is all peeled off to the photoresist covered on reading circuit and cleaned up, peeling off the extraction electrode on reading circuit 1 formed as shown in Figure 6 is four-layer structure compound extraction electrode.
Before and after the high-temperature technology of experience 400 DEG C, four-layer structure compound extraction electrode square resistance is 20 Ω/ ~ 30 Ω/.
Embodiment 2
As shown in Figure 1, a kind of preparation method of reading circuit extraction electrode of resistance to high temperature oxidation, comprises the steps:
Step a, reading circuit cleans: as shown in Figure 2, after reading circuit 1 completes from the flow of silicon factory, extraction electrode is Al metal level 2.With reading circuit 1 for substrate, first clean: utilize toluene, acetone, ethanol respectively to clean three times successively, dry up residual solution by nitrogen gun.
Step b, photoetching, corroding electrode hole: on reading circuit 1, with the rotating speed of 2500 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 3 μm, then front baking 3 minutes at 80 DEG C, forms photoresist layer 6, as shown in Figure 3.Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control developing time, while making the photoresist developing of electrode hole clean, Al metal level 2 is corroded 500-800, exposes fresh Al metal level, as shown in Figure 4.
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, sputters the Ti metal level 5 of the Pt metal level 4,600 of the Cr metal level 3,2100 of 600 successively, as shown in Figure 5 on the reading circuit of completing steps b.
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak 3 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 80W is all peeled off to the photoresist covered on reading circuit and cleaned up, peeling off the extraction electrode on reading circuit 1 formed as shown in Figure 6 is four-layer structure compound extraction electrode.
Before and after the high-temperature technology of experience 400 DEG C, four-layer structure compound extraction electrode square resistance is 20 Ω/ ~ 30 Ω/.
Embodiment 3
As shown in Figure 1, a kind of preparation method of reading circuit extraction electrode of resistance to high temperature oxidation, comprises the steps:
Step a, reading circuit cleans: as shown in Figure 2, after reading circuit 1 completes from the flow of silicon factory, extraction electrode is Al metal level 2.With reading circuit 1 for substrate, first clean: utilize toluene, acetone, ethanol respectively to clean three times successively, dry up residual solution by nitrogen gun.
Step b, photoetching, corroding electrode hole: on reading circuit 1, with the rotating speed of 2800 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2.5 μm, then front baking 2.5 minutes at 80 DEG C, forms photoresist layer 6, as shown in Figure 3.Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control developing time, while making the photoresist developing of electrode hole clean, Al metal level 2 is corroded 500-800, exposes fresh Al metal level, as shown in Figure 4.
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, sputters the Au metal level 5 of the Pt metal level 4,580 of the Cr metal level 3,2070 of 550 successively, as shown in Figure 5 on the reading circuit of completing steps b.
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak more than 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 70W is all peeled off to the photoresist covered on reading circuit and cleaned up, peeling off the extraction electrode on reading circuit 1 formed as shown in Figure 6 is four-layer structure compound extraction electrode.
Before and after the high-temperature technology of experience 400 DEG C, four-layer structure compound extraction electrode square resistance is 20 Ω/ ~ 30 Ω/.
More than show and describe general principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand, and the present invention is not restricted to the described embodiments, and what describe in above-described embodiment and specification just illustrates principle of the present invention, and without departing from the spirit and scope of the present invention, the present invention also.Have various changes and modifications, these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (3)
1. a preparation method for the reading circuit extraction electrode of resistance to high temperature oxidation, is characterized in that, comprise the steps:
Step a, reading circuit cleans: after reading circuit completes from the flow of silicon factory, extraction electrode is Al metal level, take reading circuit as substrate, utilize each ultrasonic cleaning of toluene, acetone and ethanol three times successively, clean to reading circuit surperficial without fifth wheel, then dry up residual liquid with nitrogen;
Step b, photoetching, corroding electrode hole: on step a gained reading circuit, with the rotating speed of 2500 ~ 3500 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2 ~ 3 μm, then toasts 2 ~ 3 minutes at 80 DEG C; Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control while developing time makes the photoresist developing of electrode hole clean, Al metal level is corroded 500-800;
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, the reading circuit of completing steps b sputters Ti metal level or the Cr metal level of 500-600 successively, the Au metal level of the Pa metal level of 2000-2100 or Pt metal level, 500-600 or Ti metal level;
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak more than 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 60W ~ 80W is all peeled off to the photoresist covered on reading circuit and cleaned up, peel off and form four-layer structure compound reading circuit extraction electrode.
2. the preparation method of the reading circuit extraction electrode of resistance to high temperature oxidation according to claim 1, is characterized in that, comprise the steps:
Step a, reading circuit cleans: after reading circuit completes from the flow of silicon factory, extraction electrode is Al metal level, take reading circuit as substrate, utilize each ultrasonic cleaning of toluene, acetone and ethanol three times successively, clean to reading circuit surperficial without fifth wheel, then dry up residual liquid by nitrogen gun;
Step b, photoetching, corroding electrode hole: on step a gained reading circuit, with the rotating speed of 2800 revs/min, be coated with the photoresist AZ6130 of 30 seconds, rubberization thickness 2.5 μm, then front baking 2.5 minutes at 80 DEG C; Utilize photo-etching machine exposal, adopt the developer solution of AZ300MIF to develop, control while developing time makes the photoresist developing of electrode hole clean, Al metal level is corroded 500-800;
Step c, combination electrode sputters: utilize multi-target magnetic control sputtering coating machine, the reading circuit of completing steps b sputters the Cr metal level of 550 successively, the Pt metal level of 2070, the Au metal level of 580;
Steps d, peel off cleaning: put into by the reading circuit sputtered through step c in acetone and fully soak more than 2.5 hours, utilize that frequency is 40KHz, the low power ultrasound cleaning machine ultrasonic cleaning of ultrasonic power 70W is all peeled off to the photoresist covered on reading circuit and cleaned up, peel off and form four-layer structure compound reading circuit extraction electrode.
3. the reading circuit extraction electrode of the resistance to high temperature oxidation that the preparation method of the reading circuit extraction electrode of the resistance to high temperature oxidation described in claim 1 or 2 obtains.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510449310.6A CN105070786B (en) | 2015-07-28 | 2015-07-28 | A kind of reading circuit extraction electrode of resistance to high temperature oxidation and preparation method thereof |
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| CN201510449310.6A CN105070786B (en) | 2015-07-28 | 2015-07-28 | A kind of reading circuit extraction electrode of resistance to high temperature oxidation and preparation method thereof |
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| CN105070786B CN105070786B (en) | 2017-03-08 |
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