JPS5676539A - Formation of insulating film on semiconductor substrate - Google Patents

Formation of insulating film on semiconductor substrate

Info

Publication number
JPS5676539A
JPS5676539A JP15403979A JP15403979A JPS5676539A JP S5676539 A JPS5676539 A JP S5676539A JP 15403979 A JP15403979 A JP 15403979A JP 15403979 A JP15403979 A JP 15403979A JP S5676539 A JPS5676539 A JP S5676539A
Authority
JP
Japan
Prior art keywords
aluminum
gaas
insulating film
oxidation
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15403979A
Other languages
Japanese (ja)
Other versions
JPS6311773B2 (en
Inventor
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15403979A priority Critical patent/JPS5676539A/en
Priority to GB8037987A priority patent/GB2064219B/en
Priority to FR8025340A priority patent/FR2471047B1/en
Priority to DE19803044961 priority patent/DE3044961A1/en
Publication of JPS5676539A publication Critical patent/JPS5676539A/en
Publication of JPS6311773B2 publication Critical patent/JPS6311773B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To enable formation of an insulating film having extremely low boundary level density on a GaAs substrate by vacuum evaporating aluminum in GaAs, anodizing it until the oxidation of the aluminum is completed, and thereafter heat treating it.
CONSTITUTION: The aluminum is vacuum evaporated on the GaAs substrate, is anodized by using a constant-current source until the aluminum is just completed in oxidation, and is heat treated (preferably at 300W500°C for approx. 30min) in the N2 atmosphere. Since the anodizations for the aluminum and the GaAs are different, the end of the aluminum oxidation can be simply detected. Thus, the insulating film having extremely low boundary level density can be formed on the GaAs film.
COPYRIGHT: (C)1981,JPO&Japio
JP15403979A 1979-11-28 1979-11-28 Formation of insulating film on semiconductor substrate Granted JPS5676539A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15403979A JPS5676539A (en) 1979-11-28 1979-11-28 Formation of insulating film on semiconductor substrate
GB8037987A GB2064219B (en) 1979-11-28 1980-11-27 Method of forming an insulating film on a semiconductor substrate
FR8025340A FR2471047B1 (en) 1979-11-28 1980-11-28 METHOD FOR FORMING AN INSULATING FILM ON A SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE THUS OBTAINED, IN PARTICULAR A FIELD-EFFECT TRANSISTOR
DE19803044961 DE3044961A1 (en) 1979-11-28 1980-11-28 METHOD FOR FORMING AN INSULATING FILM ON A SEMICONDUCTOR SUBSTRATE AND THE PRODUCTS OBTAINED THEREOF

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15403979A JPS5676539A (en) 1979-11-28 1979-11-28 Formation of insulating film on semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5676539A true JPS5676539A (en) 1981-06-24
JPS6311773B2 JPS6311773B2 (en) 1988-03-16

Family

ID=15575572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15403979A Granted JPS5676539A (en) 1979-11-28 1979-11-28 Formation of insulating film on semiconductor substrate

Country Status (4)

Country Link
JP (1) JPS5676539A (en)
DE (1) DE3044961A1 (en)
FR (1) FR2471047B1 (en)
GB (1) GB2064219B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681147A (en) * 1970-01-22 1972-08-01 Ibm Method for masking semiconductor regions for ion implantation
DE2932569C2 (en) * 1979-08-10 1983-04-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for reducing the density of the rapid surface states in MOS devices

Also Published As

Publication number Publication date
DE3044961A1 (en) 1981-09-17
GB2064219B (en) 1984-02-15
GB2064219A (en) 1981-06-10
FR2471047B1 (en) 1985-10-25
FR2471047A1 (en) 1981-06-12
JPS6311773B2 (en) 1988-03-16

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