JPS5662382A - Hall element - Google Patents

Hall element

Info

Publication number
JPS5662382A
JPS5662382A JP13779779A JP13779779A JPS5662382A JP S5662382 A JPS5662382 A JP S5662382A JP 13779779 A JP13779779 A JP 13779779A JP 13779779 A JP13779779 A JP 13779779A JP S5662382 A JPS5662382 A JP S5662382A
Authority
JP
Japan
Prior art keywords
action layer
protective film
insulating protective
semiconductor action
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13779779A
Other languages
Japanese (ja)
Inventor
Hatsuo Takesawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13779779A priority Critical patent/JPS5662382A/en
Publication of JPS5662382A publication Critical patent/JPS5662382A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To prevent the lowering of a thin wire bonding property by a mechanism wherein AuGe is evaporated at the fixed locations of a semiconductor action layer and an insulating protective film through opening sections reaching the semiconductor action layer in the insulating protective film formed on the semiconductor action layer, and electrodes are made up through an alloying process. CONSTITUTION:A semiconductor action layer 23 consisting of a GaAs monocrystal is formed on one main surface of a substrate 22 in GaAs approximately crosswise, and an insulating protective film 28 in SiO2, etc. is built up on the semiconductor action layer 23. Opening sections reaching the semiconductor action layer 23 are made up to one sections of the insulating protective film 28, AuGe in approximate 5,000Angstrom is evaporated at the fixed locations of the semiconductor action layer 23 and the insulating protective film 28 through the opening sections, and electrodes 24-27 are formed through an alloying process.
JP13779779A 1979-10-26 1979-10-26 Hall element Pending JPS5662382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13779779A JPS5662382A (en) 1979-10-26 1979-10-26 Hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13779779A JPS5662382A (en) 1979-10-26 1979-10-26 Hall element

Publications (1)

Publication Number Publication Date
JPS5662382A true JPS5662382A (en) 1981-05-28

Family

ID=15207068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13779779A Pending JPS5662382A (en) 1979-10-26 1979-10-26 Hall element

Country Status (1)

Country Link
JP (1) JPS5662382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0088270A2 (en) * 1982-03-08 1983-09-14 Robert Bosch Gmbh Pressure sensor
JPS61260265A (en) * 1985-05-15 1986-11-18 Toshiba Corp Image forming device
JPS6212974U (en) * 1985-07-05 1987-01-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0088270A2 (en) * 1982-03-08 1983-09-14 Robert Bosch Gmbh Pressure sensor
JPS61260265A (en) * 1985-05-15 1986-11-18 Toshiba Corp Image forming device
JPS6212974U (en) * 1985-07-05 1987-01-26

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