JPS5661169A - Preparation of compound semiconductor device - Google Patents
Preparation of compound semiconductor deviceInfo
- Publication number
- JPS5661169A JPS5661169A JP13700879A JP13700879A JPS5661169A JP S5661169 A JPS5661169 A JP S5661169A JP 13700879 A JP13700879 A JP 13700879A JP 13700879 A JP13700879 A JP 13700879A JP S5661169 A JPS5661169 A JP S5661169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- electrode
- film
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Abstract
PURPOSE:To permit the thickness of the active layer of a compound semiconductor device to be precise for uniforming its characteristics by constituting the device region by three selective epitaxial layers of N type GaAs, N<+> type GaAlAs and N<+> type GaAs and prescribing the geometry of the active layer by the selective etching of the semiconductor layers of different kinds. CONSTITUTION:A semiinsulative GaAs substrate 11 is coated with an insulative film 12 of SiO2 or the like, in which an openig is made. On the exposed substrate 11, a composite structure comprising an N type GaAs layer 14 to be an active layer, N<+> type GaAlAs layer 15 for a source electrode, and N<+> type GaAs layer 16 for a drain electrode is formed by epitaxial growth. After the film 12 is removed, the whole surface is newly coated with an insulative layer 17, and a resist mask 18 to prescribe the electrode regions of source, drain and gate is provided to etch the film 17 into a reference film showing the relative position-relations between these electrode systems. After that, the mask 18 is replaced with a mask 19 to provide source and drain electrodes 20 and 21 on the exposed surfaces of the layer 16. Then the mask 19 is replaced with a mask 22 to form a gate electrode 23 on the layer 16 between the electrodes 20 and 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13700879A JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13700879A JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5661169A true JPS5661169A (en) | 1981-05-26 |
| JPS6154265B2 JPS6154265B2 (en) | 1986-11-21 |
Family
ID=15188645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13700879A Granted JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661169A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998559A (en) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | Field effect transistor |
| JPS6037784A (en) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | Field effect transistor |
| US4824800A (en) * | 1987-05-08 | 1989-04-25 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
| US5270228A (en) * | 1991-02-14 | 1993-12-14 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating gate electrode in recess |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02154147A (en) * | 1988-12-06 | 1990-06-13 | Hitachi Constr Mach Co Ltd | Ultrasonic probe |
-
1979
- 1979-10-25 JP JP13700879A patent/JPS5661169A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998559A (en) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | Field effect transistor |
| JPS6037784A (en) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | Field effect transistor |
| US4824800A (en) * | 1987-05-08 | 1989-04-25 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
| US5270228A (en) * | 1991-02-14 | 1993-12-14 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating gate electrode in recess |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154265B2 (en) | 1986-11-21 |
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