JPS57204175A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57204175A JPS57204175A JP9056881A JP9056881A JPS57204175A JP S57204175 A JPS57204175 A JP S57204175A JP 9056881 A JP9056881 A JP 9056881A JP 9056881 A JP9056881 A JP 9056881A JP S57204175 A JPS57204175 A JP S57204175A
- Authority
- JP
- Japan
- Prior art keywords
- mask material
- metal
- mask
- insulating film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Abstract
PURPOSE:To enhance positioning accuracy for high performance by a method wherein an electrode metal is adhered on an insulating film including a hole formed on a compound semiconductor substrate having an insulating film, and the insulating film is removed with a mask material provided thereon as a mask with the adhesion of the electrode metal. CONSTITUTION:An SiO2 layer 2 is formed on a mesa-etched GaAs active layer 1 to etch a gate forming part to a concave 3. A metal 4 for Schottky junction with the GaAs layer is evaporated over the entire surface. The metal 4 is undercut via the mask material 5 to etch the SiO2 layer 2 except for the part covered with the mask material 5. Then, an ohmic metal is evaporated with the mask material 5 as a mask to form electrodes 6, 7 then to remove the mask material 5. Thus, the electrode can be automatically positioned to enhance the dimensional accuracy of the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9056881A JPS57204175A (en) | 1981-06-11 | 1981-06-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9056881A JPS57204175A (en) | 1981-06-11 | 1981-06-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57204175A true JPS57204175A (en) | 1982-12-14 |
Family
ID=14002028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9056881A Pending JPS57204175A (en) | 1981-06-11 | 1981-06-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57204175A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205765A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Manufacture of semiconductor device |
| JPS61113281A (en) * | 1984-11-08 | 1986-05-31 | New Japan Radio Co Ltd | Manufacture of fet |
| JPS6237973A (en) * | 1985-08-13 | 1987-02-18 | Matsushita Electronics Corp | Metal-electrode forming method |
| JPH0897232A (en) * | 1994-09-29 | 1996-04-12 | Nec Corp | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134979A (en) * | 1979-04-09 | 1980-10-21 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing of field-effect transistor |
-
1981
- 1981-06-11 JP JP9056881A patent/JPS57204175A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134979A (en) * | 1979-04-09 | 1980-10-21 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing of field-effect transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205765A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Manufacture of semiconductor device |
| JPS61113281A (en) * | 1984-11-08 | 1986-05-31 | New Japan Radio Co Ltd | Manufacture of fet |
| JPS6237973A (en) * | 1985-08-13 | 1987-02-18 | Matsushita Electronics Corp | Metal-electrode forming method |
| JPH0897232A (en) * | 1994-09-29 | 1996-04-12 | Nec Corp | Manufacture of semiconductor device |
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