JPS56142661A - Semiconductor integrated circuit and manufacture thereof - Google Patents

Semiconductor integrated circuit and manufacture thereof

Info

Publication number
JPS56142661A
JPS56142661A JP4490180A JP4490180A JPS56142661A JP S56142661 A JPS56142661 A JP S56142661A JP 4490180 A JP4490180 A JP 4490180A JP 4490180 A JP4490180 A JP 4490180A JP S56142661 A JPS56142661 A JP S56142661A
Authority
JP
Japan
Prior art keywords
region
type
base
resistor
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4490180A
Other languages
Japanese (ja)
Inventor
Tadanaka Yoneda
Haruyasu Yamada
Tsutomu Fujita
Toyoki Takemoto
Yuichi Hirofuji
Hiroyuki Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4490180A priority Critical patent/JPS56142661A/en
Publication of JPS56142661A publication Critical patent/JPS56142661A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an LSI having excellent high frequency characteristic by forming a resistance region simultaneously upon formation of the base region of an I<2>L and introducing impurity to the resistor simultaneously upon formation of the base of the second transistor. CONSTITUTION:An N<+> type buried region 21 and a P type buried region 22 are formed on a P type Si substrate 20. Then, an epitaxial layer 23 having 0.5-2OMEGAcm of N type specific resistance is formed thereon. Thereafter, a P type isolation region 24 is formed, and the base 25 of an I<2>L and a resistor region 25' are simultaneously formed. Subsequently, a P<+> type resistance region 27 having lower sheet resistance than the region 25', base region 26, injector region 28 and base contact region 29 of an NPN transistor are simultaneously formed. Then, emitter region 30, collector contact region 31 and collector region 32 are simultaneously formed by N<+> type diffusion. Since the junction capacity of the resistor can be reduced, a low resistor having preferable high frequency characteristic can be obtained.
JP4490180A 1980-04-04 1980-04-04 Semiconductor integrated circuit and manufacture thereof Pending JPS56142661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4490180A JPS56142661A (en) 1980-04-04 1980-04-04 Semiconductor integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4490180A JPS56142661A (en) 1980-04-04 1980-04-04 Semiconductor integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56142661A true JPS56142661A (en) 1981-11-07

Family

ID=12704369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4490180A Pending JPS56142661A (en) 1980-04-04 1980-04-04 Semiconductor integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56142661A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
US5066602A (en) * 1982-04-19 1991-11-19 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor ic including polar transistors
EP0521219A2 (en) * 1991-07-01 1993-01-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for its fabrication
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
US5066602A (en) * 1982-04-19 1991-11-19 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor ic including polar transistors
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
EP0521219A2 (en) * 1991-07-01 1993-01-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for its fabrication

Similar Documents

Publication Publication Date Title
ES474421A1 (en) Integrated semiconductor circuit for a small-sized structural element, and method for its production.
JPS54100273A (en) Memory circuit and variable resistance element
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS577157A (en) Semiconductor device
JPS56108255A (en) Semiconductor integrated circuit
JPS5687360A (en) Transistor device
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
JPS5762552A (en) Manufacture of semiconductor device
JPS5712546A (en) Semiconductor device and its manufacture
JPS56112765A (en) Semiconductor device
JPS5750473A (en) Semiconductor integrated circuit device
JPS5710968A (en) Semiconductor device
JPS54101289A (en) Semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS5710963A (en) Semiconductor device and manufacture thereof
JPS5469079A (en) Manufacture of semiconductor device
JPS5541787A (en) Semiconductor device
JPS57162361A (en) Manufacture of semiconductor integrated circuit
JPS5710964A (en) Manufacture of semiconductor device
JPS5533007A (en) Semiconductor intergated circuit
JPS57157567A (en) Vertical type p-n-p transistor
JPS56115555A (en) Semiconductor integrated circuit device
JPS5715466A (en) Semiconductor device
JPS5787170A (en) Semiconductor device
JPS5522876A (en) Manufacturing method of semiconductor integrated circuit device with lateral transistor