JPS5658274A - Smiconductor device - Google Patents
Smiconductor deviceInfo
- Publication number
- JPS5658274A JPS5658274A JP13381879A JP13381879A JPS5658274A JP S5658274 A JPS5658274 A JP S5658274A JP 13381879 A JP13381879 A JP 13381879A JP 13381879 A JP13381879 A JP 13381879A JP S5658274 A JPS5658274 A JP S5658274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- specific resistance
- conduction type
- substrate
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 abstract 13
- 239000000758 substrate Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve current characteristics in the reverse direction without decreasing the specific resistance of a semiconductor substrate having high specific resistance by a mechanism wherein a surface layer of impurities belonging to the same conduction type as the substrate is thinly formed on the substrate. CONSTITUTION:A thin layer 17 having the concentration of impurities of the same conduction type, specific resistance thereof is previously reduced to lower than a semiconductor substrate 11, is made to the substrate 11 functioning as an I layer. An insulating layer 14, an opposite conduction type diffusion layer 13 and the same conduction type diffusion layer 12, and electrode layers 15, 16 are formed. Here, the surface layer 17 is thinned sufficiently as compared to the diffusion layer 13 so that the diffusion layer 13 reaches the I layer 11. Thus, the action of a PIN diode formed is conduced by the layer 11, and the formation of an inversion layer can be suppressed at a boundary with the layer 14 even when the specific resistance of the layer 11 is enlarged sufficiently. Consequently, the increase of currents in the reverse direction can be controlled, and the rate of accepted products on production and reliability can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13381879A JPS5658274A (en) | 1979-10-17 | 1979-10-17 | Smiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13381879A JPS5658274A (en) | 1979-10-17 | 1979-10-17 | Smiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5658274A true JPS5658274A (en) | 1981-05-21 |
Family
ID=15113752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13381879A Pending JPS5658274A (en) | 1979-10-17 | 1979-10-17 | Smiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5658274A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869559A2 (en) * | 1997-04-04 | 1998-10-07 | Siemens Aktiengesellschaft | Leistungsdiode |
-
1979
- 1979-10-17 JP JP13381879A patent/JPS5658274A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869559A2 (en) * | 1997-04-04 | 1998-10-07 | Siemens Aktiengesellschaft | Leistungsdiode |
| EP0869559A3 (en) * | 1997-04-04 | 1999-01-13 | Siemens Aktiengesellschaft | Leistungsdiode |
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