JPS5660065A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5660065A
JPS5660065A JP13684679A JP13684679A JPS5660065A JP S5660065 A JPS5660065 A JP S5660065A JP 13684679 A JP13684679 A JP 13684679A JP 13684679 A JP13684679 A JP 13684679A JP S5660065 A JPS5660065 A JP S5660065A
Authority
JP
Japan
Prior art keywords
substrate
gate
thickness
film
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13684679A
Other languages
Japanese (ja)
Inventor
Haruhisa Mori
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13684679A priority Critical patent/JPS5660065A/en
Publication of JPS5660065A publication Critical patent/JPS5660065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide various functions for the semiconductor device by utilizing the back surface of an insulating substrate by forming the second gate of an insulated gate type transistor on the back surface of the substrate formed with the transistor in a semiconductor insular region. CONSTITUTION:A silicon semiconductor island 4 is formed by epitaxial growth and etching on the surface of a sapphire substrate 2, and an MOSFET having a channel forming region 4a, a source region 4b, a drain region 4c, a gate insulating film 6 and a gate electrode 8 is, for example, formed on the island 4. Then, the second gate electrode 12 having the substrate 2 as an insulating film 2a is formed on the back surface of the substrate 2. In order to similarly operate the gate 12 to the gate 8 in this case, the thickness of the film 2a is increased by 2.5 times as large as the thickness of the film 6. Further, wiring layers 14, 16, 18, 20 are formed on the front and back surfaces of the substrate 2. In case, for example, that a capacitor 22 is formed on the superposed part of the layers 14, 16, the thickness of the part is formed equally to that of the film 2a and the other intersections are increased in thickness.
JP13684679A 1979-10-23 1979-10-23 Semiconductor device Pending JPS5660065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13684679A JPS5660065A (en) 1979-10-23 1979-10-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13684679A JPS5660065A (en) 1979-10-23 1979-10-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5660065A true JPS5660065A (en) 1981-05-23

Family

ID=15184862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13684679A Pending JPS5660065A (en) 1979-10-23 1979-10-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660065A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1905074A2 (en) * 2005-07-19 2008-04-02 International Business Machines Corporation High performance capacitors in planar back gates cmos

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1905074A2 (en) * 2005-07-19 2008-04-02 International Business Machines Corporation High performance capacitors in planar back gates cmos
EP1905074A4 (en) * 2005-07-19 2012-06-27 Ibm High performance capacitors in planar back gates cmos

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