JPS5637629A - Formation of thin film pattern - Google Patents

Formation of thin film pattern

Info

Publication number
JPS5637629A
JPS5637629A JP11370879A JP11370879A JPS5637629A JP S5637629 A JPS5637629 A JP S5637629A JP 11370879 A JP11370879 A JP 11370879A JP 11370879 A JP11370879 A JP 11370879A JP S5637629 A JPS5637629 A JP S5637629A
Authority
JP
Japan
Prior art keywords
film
thin film
gas plasma
etched
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11370879A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11370879A priority Critical patent/JPS5637629A/en
Publication of JPS5637629A publication Critical patent/JPS5637629A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a pattern with a flat surface and to prevent the breakage of wire by making two-layer resist films consisting of films which are easy and hard to be etched to gas plasma respectively on a thin film wherein an upper layer film consists as a mask and flows are provided on the upper layer film after a lower layer film and the thin film are etched and the thin film is evaporated to remove the lower layer resist film. CONSTITUTION:A resist film 11 which is exposed by far ultraviolet rays and easy to be etched to CF4 gas plasma and a positive type resist film 12 which is exposed by ultraviolet rays and hard to be etched by the CF4 gas plasma are placed upon an Al thin film 6. Masks 12A-12C are made by exposure development and masks 11A-11C are formed by CF4 gas plasma photoetching. Then, electrodes 6A-6C are formed by etching the Al film by using BCl3 gas. Next, flows are provided on the masks 12A-12C by etching the side of the film 11 by the CF4 gas plasma and SiO film 10 is evaporated to bury the part of the Al film where the etching is removed. Finally, the films 10A-10C are lifted off by solving and eliminating the resists 12A-12C by acetone and a flat surface will be formed.
JP11370879A 1979-09-05 1979-09-05 Formation of thin film pattern Pending JPS5637629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11370879A JPS5637629A (en) 1979-09-05 1979-09-05 Formation of thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11370879A JPS5637629A (en) 1979-09-05 1979-09-05 Formation of thin film pattern

Publications (1)

Publication Number Publication Date
JPS5637629A true JPS5637629A (en) 1981-04-11

Family

ID=14619142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11370879A Pending JPS5637629A (en) 1979-09-05 1979-09-05 Formation of thin film pattern

Country Status (1)

Country Link
JP (1) JPS5637629A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106064A (en) * 1983-11-15 1985-06-11 Canon Inc Loader and unloader of recording medium cassette
JPS6428554U (en) * 1987-08-06 1989-02-20
EP1041615A2 (en) * 1999-03-30 2000-10-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106064A (en) * 1983-11-15 1985-06-11 Canon Inc Loader and unloader of recording medium cassette
JPH05789B2 (en) * 1983-11-15 1993-01-06 Canon Kk
JPS6428554U (en) * 1987-08-06 1989-02-20
EP1041615A2 (en) * 1999-03-30 2000-10-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light
EP1041615A3 (en) * 1999-03-30 2001-04-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light
US6569775B1 (en) 1999-03-30 2003-05-27 Applied Materials, Inc. Method for enhancing plasma processing performance

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