JPS5632733A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5632733A
JPS5632733A JP10785579A JP10785579A JPS5632733A JP S5632733 A JPS5632733 A JP S5632733A JP 10785579 A JP10785579 A JP 10785579A JP 10785579 A JP10785579 A JP 10785579A JP S5632733 A JPS5632733 A JP S5632733A
Authority
JP
Japan
Prior art keywords
semiconductor device
film
manufacture
al2o3
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10785579A
Other languages
Japanese (ja)
Inventor
Tsuneo Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10785579A priority Critical patent/JPS5632733A/en
Publication of JPS5632733A publication Critical patent/JPS5632733A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To cover the surface of a semiconductor device by an Al film containing Al2O3 in a simple process, by performing heat treating and implantation of O2 ions simultaneously. CONSTITUTION:A wafter 1 is fixed 2 and tightly contacted to a support stand 3, and heated to about 300 deg.C by a heater 4. O2 ions are implanted into an Al film on the wafer 1 at, e.g., 30 KeV, and at about 1X10<16>/cm<2>. Then, a uniform Al2O3 film is formed only in the vicinity of the surface.
JP10785579A 1979-08-23 1979-08-23 Manufacture of semiconductor device Pending JPS5632733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10785579A JPS5632733A (en) 1979-08-23 1979-08-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10785579A JPS5632733A (en) 1979-08-23 1979-08-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5632733A true JPS5632733A (en) 1981-04-02

Family

ID=14469763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10785579A Pending JPS5632733A (en) 1979-08-23 1979-08-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5632733A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176943U (en) * 1986-04-30 1987-11-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176943U (en) * 1986-04-30 1987-11-10

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