ATE296T1 - CVD COATING DEVICE FOR SMALL PARTS AND THEIR USE FOR COATING CLAMPING ELEMENTS OF DENTAL TURBINES. - Google Patents
CVD COATING DEVICE FOR SMALL PARTS AND THEIR USE FOR COATING CLAMPING ELEMENTS OF DENTAL TURBINES.Info
- Publication number
- ATE296T1 ATE296T1 AT79104012T AT79104012T ATE296T1 AT E296 T1 ATE296 T1 AT E296T1 AT 79104012 T AT79104012 T AT 79104012T AT 79104012 T AT79104012 T AT 79104012T AT E296 T1 ATE296 T1 AT E296T1
- Authority
- AT
- Austria
- Prior art keywords
- small parts
- coating
- clamping elements
- cvd
- frame
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
An apparatus useful for the chemical vapor deposition treatment of small parts is provided. The articles to be treated are received upon a frame and the CVD treatment is carried out within a heated receptor, with the deposition material feed line movable for more uniform coating. Immediately subsequent to the CVD treatment, the coating may be hardened by removing the supporting frame from the still hot receptor by attaching the frame to the movable material feed line. The small parts are now able to be rapidly quenched in freely circulating cooling air.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2849240A DE2849240C2 (en) | 1978-11-13 | 1978-11-13 | CVD coating device for small parts and their use |
EP79104012A EP0011148B1 (en) | 1978-11-13 | 1979-10-17 | Cvd-device for coating small articles and its use for coating gripping devices of dental turbines |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE296T1 true ATE296T1 (en) | 1981-10-15 |
Family
ID=6054580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT79104012T ATE296T1 (en) | 1978-11-13 | 1979-10-17 | CVD COATING DEVICE FOR SMALL PARTS AND THEIR USE FOR COATING CLAMPING ELEMENTS OF DENTAL TURBINES. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4258658A (en) |
EP (1) | EP0011148B1 (en) |
AT (1) | ATE296T1 (en) |
DE (1) | DE2849240C2 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4499354A (en) * | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
US4920908A (en) * | 1983-03-29 | 1990-05-01 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
US4732110A (en) * | 1983-04-29 | 1988-03-22 | Hughes Aircraft Company | Inverted positive vertical flow chemical vapor deposition reactor chamber |
US4459104A (en) * | 1983-06-01 | 1984-07-10 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4550684A (en) * | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
US4680447A (en) * | 1983-08-11 | 1987-07-14 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
DE3403894C1 (en) * | 1984-02-04 | 1985-07-25 | Kulzer & Co GmbH, 6393 Wehrheim | Device for coating a metallic dental prosthesis part and method for operating such a device |
US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4606935A (en) * | 1985-10-10 | 1986-08-19 | International Business Machines Corporation | Process and apparatus for producing high purity oxidation on a semiconductor substrate |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6780464B2 (en) | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
US6564811B2 (en) * | 2001-03-26 | 2003-05-20 | Intel Corporation | Method of reducing residue deposition onto ash chamber base surfaces |
KR100892123B1 (en) * | 2008-12-31 | 2009-04-09 | (주)세미머티리얼즈 | Poly silicon deposition device |
DE102009038799B4 (en) | 2009-08-25 | 2011-07-28 | Grenzebach Maschinenbau GmbH, 86663 | Method and device for the bubble-free bonding of large-area glass plates |
US10100409B2 (en) * | 2015-02-11 | 2018-10-16 | United Technologies Corporation | Isothermal warm wall CVD reactor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB200879A (en) * | 1922-03-24 | 1923-07-24 | Philips Nv | Improvements in or relating to the manufacture of bodies from metals having a high melting-point |
NL254549A (en) * | 1959-08-07 | |||
US3213827A (en) * | 1962-03-13 | 1965-10-26 | Union Carbide Corp | Apparatus for gas plating bulk material to metallize the same |
DE1521494B1 (en) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Device for diffusing foreign matter into semiconductor bodies |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
GB1199531A (en) * | 1968-03-05 | 1970-07-22 | Edwards High Vacuum Int Ltd | Apparatus for Vacuum Deposition. |
US3493220A (en) * | 1968-03-07 | 1970-02-03 | Us Navy | Furnace for treating material in a gas atmosphere |
US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
DE1769520A1 (en) * | 1968-06-05 | 1972-03-02 | Siemens Ag | Process for the epitaxial deposition of crystalline material from the gas phase, in particular for semiconductor purposes |
US3721210A (en) * | 1971-04-19 | 1973-03-20 | Texas Instruments Inc | Low volume deposition reactor |
US3796182A (en) * | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
GB1356769A (en) * | 1973-03-27 | 1974-06-12 | Cit Alcatel | Apparatus and method for depositing thin layers on a substrate |
US4140078A (en) * | 1974-03-16 | 1979-02-20 | Leybold Heraeus Gmbh & Co. Kg | Method and apparatus for regulating evaporating rate and layer build up in the production of thin layers |
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
DE2539434A1 (en) * | 1975-09-04 | 1977-03-17 | Siemens Ag | DEVICE FOR ALL-ROUND COATING OF SMALL METALLIC PARTS |
US4116161A (en) * | 1976-11-12 | 1978-09-26 | Mcdonnell Douglas Corporation | Dual tumbling barrel plating apparatus |
DE2739258C2 (en) * | 1977-08-31 | 1985-06-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for applying a protective layer containing silicon carbide and silicon nitride to shaped carbon bodies |
-
1978
- 1978-11-13 DE DE2849240A patent/DE2849240C2/en not_active Expired
-
1979
- 1979-10-17 EP EP79104012A patent/EP0011148B1/en not_active Expired
- 1979-10-17 AT AT79104012T patent/ATE296T1/en active
- 1979-10-24 US US06/087,886 patent/US4258658A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4258658A (en) | 1981-03-31 |
EP0011148B1 (en) | 1981-10-14 |
DE2849240C2 (en) | 1983-01-13 |
EP0011148A1 (en) | 1980-05-28 |
DE2849240A1 (en) | 1980-05-14 |
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