JPS5629369A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5629369A
JPS5629369A JP10459679A JP10459679A JPS5629369A JP S5629369 A JPS5629369 A JP S5629369A JP 10459679 A JP10459679 A JP 10459679A JP 10459679 A JP10459679 A JP 10459679A JP S5629369 A JPS5629369 A JP S5629369A
Authority
JP
Japan
Prior art keywords
regions
insulating layer
region
thickness
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10459679A
Other languages
English (en)
Inventor
Kenji Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10459679A priority Critical patent/JPS5629369A/ja
Publication of JPS5629369A publication Critical patent/JPS5629369A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP10459679A 1979-08-17 1979-08-17 Insulated gate type field effect transistor Pending JPS5629369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10459679A JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10459679A JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5629369A true JPS5629369A (en) 1981-03-24

Family

ID=14384800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10459679A Pending JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5629369A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
EP0810652A2 (en) * 1992-01-28 1997-12-03 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113684A (en) * 1976-03-19 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113684A (en) * 1976-03-19 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
EP0810652A2 (en) * 1992-01-28 1997-12-03 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same
EP0810652A3 (en) * 1992-01-28 1998-05-20 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same

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