JPS52122484A - Field effect type polisilicon resistance element - Google Patents

Field effect type polisilicon resistance element

Info

Publication number
JPS52122484A
JPS52122484A JP3826476A JP3826476A JPS52122484A JP S52122484 A JPS52122484 A JP S52122484A JP 3826476 A JP3826476 A JP 3826476A JP 3826476 A JP3826476 A JP 3826476A JP S52122484 A JPS52122484 A JP S52122484A
Authority
JP
Japan
Prior art keywords
polisilicon
field effect
resistance element
effect type
gete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3826476A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3826476A priority Critical patent/JPS52122484A/en
Publication of JPS52122484A publication Critical patent/JPS52122484A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To use the channel part of the i layer of the poly-Si sandwiched by source and drain as a high resistance by applying a voltage to the substrate side which becomes a gete and modulating its conductivity.
JP3826476A 1976-04-07 1976-04-07 Field effect type polisilicon resistance element Pending JPS52122484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3826476A JPS52122484A (en) 1976-04-07 1976-04-07 Field effect type polisilicon resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3826476A JPS52122484A (en) 1976-04-07 1976-04-07 Field effect type polisilicon resistance element

Publications (1)

Publication Number Publication Date
JPS52122484A true JPS52122484A (en) 1977-10-14

Family

ID=12520454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3826476A Pending JPS52122484A (en) 1976-04-07 1976-04-07 Field effect type polisilicon resistance element

Country Status (1)

Country Link
JP (1) JPS52122484A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128295A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Mis-type semiconductor integrated circuit device
JPS54140488A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device
JPS5599776A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Variable resistance semiconductor device
JPS5629369A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS6047467A (en) * 1983-08-25 1985-03-14 Seiko Epson Corp Complementary thin film transistor
JPS61121467A (en) * 1984-11-19 1986-06-09 Seiko Epson Corp Semiconductor memory
JPH01120868A (en) * 1987-11-05 1989-05-12 Hitachi Ltd Thin film semiconductor device
JPH03114030A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp Production of liquid crystal display device
JPH04208517A (en) * 1990-11-30 1992-07-30 Nec Corp Semiconductor device
EP0621644A2 (en) * 1993-04-23 1994-10-26 International Business Machines Corporation Semiconductor-on-insulator field-effect transistor
JP2016058711A (en) * 2014-05-30 2016-04-21 株式会社半導体エネルギー研究所 Semiconductor device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235272B2 (en) * 1978-03-29 1987-07-31 Hitachi Ltd
JPS54128295A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Mis-type semiconductor integrated circuit device
JPS54140488A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Semiconductor device
JPS5810863B2 (en) * 1978-04-24 1983-02-28 株式会社日立製作所 semiconductor equipment
JPS5599776A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Variable resistance semiconductor device
JPS5629369A (en) * 1979-08-17 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS6047467A (en) * 1983-08-25 1985-03-14 Seiko Epson Corp Complementary thin film transistor
JPS61121467A (en) * 1984-11-19 1986-06-09 Seiko Epson Corp Semiconductor memory
JPH0691222B2 (en) * 1984-11-19 1994-11-14 セイコーエプソン株式会社 Semiconductor memory device
JPH01120868A (en) * 1987-11-05 1989-05-12 Hitachi Ltd Thin film semiconductor device
JPH03114030A (en) * 1990-06-25 1991-05-15 Seiko Epson Corp Production of liquid crystal display device
JPH04208517A (en) * 1990-11-30 1992-07-30 Nec Corp Semiconductor device
EP0621644A2 (en) * 1993-04-23 1994-10-26 International Business Machines Corporation Semiconductor-on-insulator field-effect transistor
EP0621644A3 (en) * 1993-04-23 1995-08-16 Ibm Semiconductor-on-insulator field-effect transistor.
JP2016058711A (en) * 2014-05-30 2016-04-21 株式会社半導体エネルギー研究所 Semiconductor device

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