JPS5627946A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5627946A
JPS5627946A JP10424179A JP10424179A JPS5627946A JP S5627946 A JPS5627946 A JP S5627946A JP 10424179 A JP10424179 A JP 10424179A JP 10424179 A JP10424179 A JP 10424179A JP S5627946 A JPS5627946 A JP S5627946A
Authority
JP
Japan
Prior art keywords
film
polycrystal silicon
psg
polycrystal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10424179A
Other languages
Japanese (ja)
Other versions
JPS623582B2 (en
Inventor
Kimiyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10424179A priority Critical patent/JPS5627946A/en
Publication of JPS5627946A publication Critical patent/JPS5627946A/en
Publication of JPS623582B2 publication Critical patent/JPS623582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make it possible to form a precise wiring pattern without the breaking of the wire at a stepped portion by a lift-off method wherein the wet etching is not used in the wiring patterning of a metal film. CONSTITUTION:An insulating film 3, a polycrystal silicon layer 4, and an insulating film 5 are formed on a semiconductor substrate 1 in which a diffused region 2 is formed, and a contact hole 6 is formed. Then, a polycrystal silicon film 7 and a PSG layer 8 are formed, and phosphorus is diffused into the polycrystal. Thereafter, a photoresist film 9 is formed, the PSG is removed, thereby the polycrystal silicon film is exposed. Then, high-melting point metal 10 is evaporated, and the photoresist film is removed, thereby the unnecessary metal film is removed. Then, the PSG film is removed, and the polycrystal silicon film 7 is transformed into silicon dioxide film 7' in the high temperature oxide atmosphere. In this method, since the metal film is not subjected to the wet etching, the side etching from the sides of the resist film is not carried out, and the wiring is not broken.
JP10424179A 1979-08-15 1979-08-15 Manufacture of semiconductor device Granted JPS5627946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10424179A JPS5627946A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10424179A JPS5627946A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5627946A true JPS5627946A (en) 1981-03-18
JPS623582B2 JPS623582B2 (en) 1987-01-26

Family

ID=14375453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10424179A Granted JPS5627946A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627946A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Also Published As

Publication number Publication date
JPS623582B2 (en) 1987-01-26

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