JPS5626484A - Semiconductor light source - Google Patents

Semiconductor light source

Info

Publication number
JPS5626484A
JPS5626484A JP10226479A JP10226479A JPS5626484A JP S5626484 A JPS5626484 A JP S5626484A JP 10226479 A JP10226479 A JP 10226479A JP 10226479 A JP10226479 A JP 10226479A JP S5626484 A JPS5626484 A JP S5626484A
Authority
JP
Japan
Prior art keywords
layer
type
gasb
light
algaassb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10226479A
Other languages
Japanese (ja)
Other versions
JPS5741835B2 (en
Inventor
Naoki Kobayashi
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10226479A priority Critical patent/JPS5626484A/en
Publication of JPS5626484A publication Critical patent/JPS5626484A/en
Publication of JPS5741835B2 publication Critical patent/JPS5741835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To make possible to take out much light by constructing a semiconductor light source of an active layer of InGaAsSb, a light guide layer of InGaAsSb or GaSb and a clad layer of AlGaAsSb whose compositions are each specified. CONSTITUTION:On an N type GaSb substrate 11, an N type AlGaAsSb first clad layer 12 and an N type light guide layer 13 of Inx'Ga1-x'ASy, Sb1-y' or GaSb are stacked and epitaxially grown. And further on them, an N type or P type InxGa1-x AsySb1-y active layer 14, a P type AlGaAsSb second clad layer 15 and a P type GaSb layer 16 are stacked in the same way and epitaxially grown. The relation of x and y are specified as x'<x and y'<y. By so doing, the band gap and dielectric constant of the light gide layer 13 are made bigger than those of the active layer 14, therefore, the efficiency to take out light to the layer 13 is increased and a diode of high efficiency and long life is obtained.
JP10226479A 1979-08-13 1979-08-13 Semiconductor light source Granted JPS5626484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10226479A JPS5626484A (en) 1979-08-13 1979-08-13 Semiconductor light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10226479A JPS5626484A (en) 1979-08-13 1979-08-13 Semiconductor light source

Publications (2)

Publication Number Publication Date
JPS5626484A true JPS5626484A (en) 1981-03-14
JPS5741835B2 JPS5741835B2 (en) 1982-09-04

Family

ID=14322727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10226479A Granted JPS5626484A (en) 1979-08-13 1979-08-13 Semiconductor light source

Country Status (1)

Country Link
JP (1) JPS5626484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729030A (en) * 1995-11-06 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729030A (en) * 1995-11-06 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Also Published As

Publication number Publication date
JPS5741835B2 (en) 1982-09-04

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